| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 01/29/2014 | CN103541011A Method of growing REBCO (Rear Earth Ba2Cu3Ox) high temperature superconductive quasi single crystal |
| 01/29/2014 | CN103541010A Erbium-doped aluminum borate nanowire and preparation method thereof |
| 01/29/2014 | CN103541009A Recycling method of sapphire crystal residue |
| 01/29/2014 | CN103541008A Growth method and growth device of large-size gallium oxide single crystal |
| 01/29/2014 | CN103541007A Directional growth method for cone face of KDP (Potassium Dihydrogen Phosphate) crystal |
| 01/29/2014 | CN103541006A Preparation method of hydroxyapatite whisker |
| 01/29/2014 | CN103541005A Preparation method of magnetic hydroxylapatite crystal whisker ball |
| 01/29/2014 | CN103541004A polycrystalline silicon ingot and manufacture methode for the same |
| 01/29/2014 | CN103541003A Polysilicon ingot furnace |
| 01/29/2014 | CN103541002A Dual-power adaptive control technology applied to polycrystalline silicon ingot casting |
| 01/29/2014 | CN103541001A Preparation method for improving electrical resistivity and thickness consistency of epitaxial slice |
| 01/29/2014 | CN103541000A Device and method for preparing boron nitride single crystal |
| 01/29/2014 | CN103540999A Preparation method of component-adjusting ternary (Sb1-xBix)2Se3 nanowire |
| 01/29/2014 | CN103540998A Annealing process for growing large-size sapphire crystal by kyropoulos method |
| 01/29/2014 | CN103540997A Controlling method of artificial crystal inclusion |
| 01/29/2014 | CN103540996A Method for producing calcium sulfate whiskers from waste sulfuric acid |
| 01/29/2014 | CN103540995A Method used for liquid phase synthesis of germanium nanowires |
| 01/29/2014 | CN103540994A Directional growth device for cone face of KDP (Potassium Dihydrogen Phosphate) crystal |
| 01/29/2014 | CN103540993A Method for preparing calcium sulfate whiskers by use of potassium feldspar decomposition residue |
| 01/29/2014 | CN103540910A Spray header and reaction cavity |
| 01/29/2014 | CN103540909A LPCVD (Low Pressure Chemical Vapor Deposition) method of polycrystalline silicon |
| 01/29/2014 | CN103539136A Industrial production method of high-purity forsterite crystal material |
| 01/29/2014 | CN103537269A Preparation and application of TiO2 nanotube assembled {001} surface single crystal photoelectrode |
| 01/29/2014 | CN102352535B Method for preparing calcium sulfate crystal whiskers from desulfurized gypsum under normal pressure |
| 01/29/2014 | CN102296352B Ingot casting method for single polysilicon of 800kg |
| 01/29/2014 | CN102037546B Methods of making an unsupported article of pure or doped semiconducting material |
| 01/29/2014 | CN101646809B Process for producing zinc oxide single-crystal |
| 01/23/2014 | WO2014014224A1 Device for growing monocrystalline silicon and method for manufacturing same |
| 01/23/2014 | WO2014013773A1 SiC SINGLE CRYSTAL INGOT AND PRODUCTION METHOD THEREFOR |
| 01/23/2014 | WO2014013698A1 APPARATUS FOR PRODUCING SiC SINGLE CRYSTAL AND METHOD FOR PRODUCING SiC SINGLE CRYSTAL |
| 01/23/2014 | WO2014013675A1 Method for growing silicon single crystal |
| 01/23/2014 | WO2014012237A1 Method and apparatus for growing nitride-based compound semiconductor crystals |
| 01/23/2014 | US20140021418 Bi-substituted rare earth iron garnet single crystal, method for producing same, and optical device |
| 01/22/2014 | EP2687623A1 Silica container for pulling up single crystal silicon, and method for manufacturing same |
| 01/22/2014 | EP2686465A2 Automated vision system for a crystal growth apparatus |
| 01/22/2014 | CN203403172U Lifting device for aluminum oxide single crystal growth |
| 01/22/2014 | CN203403171U Crucible for casting polycrystalline silicon ingot |
| 01/22/2014 | CN203403170U 铸锭炉 Ingot furnace |
| 01/22/2014 | CN103534391A Process for producing group 13 metal nitride, and seed crystal substrate for use in same |
| 01/22/2014 | CN103526297A Method for preparing topological insulator Bi2Se3 film |
| 01/22/2014 | CN103526296A Method of manufacturing gallium nitride substrate and gallium nitride substrate manufactured by the same |
| 01/22/2014 | CN103526295A High-purity high-hardness polycrystalline cubic boron nitride block material and preparation method thereof |
| 01/22/2014 | CN103526294A Crystalline material with intermediate infrared broadband luminescence property and preparation method thereof |
| 01/22/2014 | CN103526293A Method of preparing cadmium tungstate nanowire by microwave method |
| 01/22/2014 | CN103526292A In-plane shearing type piezoelectric sensing element and manufacturing method thereof |
| 01/22/2014 | CN103526291A Surface enhanced Raman scattering substrate, preparation method therefor and application thereof |
| 01/22/2014 | CN103526290A Preparation method of polycrystalline silicon cast ingot |
| 01/22/2014 | CN103526289A Sub-ingot silicon rod with technology protection ends and production method |
| 01/22/2014 | CN103526288A Method for interface effect induced self-assembly of high-density nano array |
| 01/22/2014 | CN103526287A Accurate-positioning ingot furnace graphite baseboard |
| 01/22/2014 | CN103526286A Precise temperature adjustment device of polycrystalline ingot furnace |
| 01/22/2014 | CN103526284A Ferrite niobate titanate or ferrite niobate epitaxial thin film, and preparation method and application thereof |
| 01/22/2014 | CN103526283A Method for preparing pure-a-axis-direction YBCO liquid phase epitaxy film |
| 01/22/2014 | CN103526282A Device and method for growing nitride single-crystal material |
| 01/22/2014 | CN103526280A Preparation method of crystal pulling quartz glass crucible with groove on inner surface |
| 01/22/2014 | CN103526279A Sleeve type graphite heater used for GaAs (gallium arsenide) crystal growth |
| 01/22/2014 | CN103526278A Method and apparatus for casting of monocrystalline silicon ingot |
| 01/22/2014 | CN103526277A Method for manufacturing gypsum whisker with hexagonal cross section and low phosphorus content |
| 01/22/2014 | CN103526227A Method for preparing composite electrode |
| 01/22/2014 | CN103525397A Preparation method of nanocrystal with core-shell-shell structure |
| 01/22/2014 | CN103521133A High-impact-toughness cubic boron nitride, synthetic method and application thereof |
| 01/21/2014 | US8632633 In-situ growth of engineered defects in graphene by epitaxial reproduction |
| 01/21/2014 | CA2745479C Redispersible dried nanocrystalline cellulose |
| 01/16/2014 | US20140017479 Method of forming an r-plane sapphire crystal |
| 01/16/2014 | DE112012001613T5 Halbleiterlaminat und Prozess für seine Herstellung und Halbleiterelement Semiconductor laminate and process for its production and semiconductor element |
| 01/15/2014 | EP2684988A1 Base, substrate with gallium nitride crystal layer, and process for producing same |
| 01/15/2014 | EP2684599A1 Method for producing colloidal crystal, and colloidal crystal |
| 01/15/2014 | CN203393259U Temperature preservation body structure with heat insulation ring for pseudo-single crystal ingot furnace |
| 01/15/2014 | CN203393258U Feeder |
| 01/15/2014 | CN203393257U Ingot furnace with plurality of heat-conduction bottom plates for producing efficient polycrystalline silicon ingot |
| 01/15/2014 | CN203393256U Graphite crucible for polycrystalline silicon ingot furnace |
| 01/15/2014 | CN203393255U Crucible for realizing no black edges of polycrystalline silicon cast ingot |
| 01/15/2014 | CN103518266A Group III nitride semiconductor light-emitting element |
| 01/15/2014 | CN103518008A Semiconductor laminate and process for production thereof, and semiconductor element |
| 01/15/2014 | CN103510158A Compatible small-disk base for silicon carbide epitaxial furnace and using method thereof |
| 01/15/2014 | CN103510157A Induced crystal growth technology for efficient ingot casting |
| 01/15/2014 | CN103510156A 多晶硅棒 Polysilicon rods |
| 01/15/2014 | CN103510155A Semiconductor crystal removal apparatus and production method for semiconductor crystal |
| 01/15/2014 | CN103510151A Method for preparing calcium sulfate whiskers from dolomite |
| 01/15/2014 | CN103506629A Gold nanorod vertical array and preparing method thereof |
| 01/15/2014 | CN103506263A Polycrystalline silicon crucible spraying method free of drying and silicon nitride coating |
| 01/15/2014 | CN102703870B Nonmagnetic Ru film and production method thereof |
| 01/15/2014 | CN102548061B Water-cooling copper electrode for producing polycrystalline silicon vacuum furnace |
| 01/15/2014 | CN101930148B 3-stibium 4-potassium zincate compound and monocrystal as well as preparation method and application thereof |
| 01/09/2014 | WO2014007852A1 Ceramic structures for enhanced shape memory and pseudoelastic effects |
| 01/09/2014 | WO2014007761A1 Method of preparing an electrically conductive material, and an electrically conductive material |
| 01/09/2014 | WO2014007196A1 Crucible consisting of carbon, and method for manufacturing same |
| 01/09/2014 | WO2014006879A1 Laser medium, laser oscillation device and laser oscillation method |
| 01/09/2014 | WO2014006320A2 Substrate comprising a layer of silicon and/or germanium and one or a plurality of objects of varying shapes |
| 01/09/2014 | WO2014006319A1 Substrate comprising a layer of silicon and/or germanium and one or a plurality of nanowires oriented perpendicular to the surface of the substrate |
| 01/09/2014 | DE112012001248T5 Kristalline Substanz, Substrat und Verfahren zur Herstellung der kristallinen Substanz Crystalline substance, substrate and method for preparing the crystalline substance of |
| 01/08/2014 | EP2682503A1 Evaporation device for a vacuum-deposition apparatus and vacuum-deposition apparatus including such an evaporation device |
| 01/08/2014 | EP2680983A2 Techniques for producing thin films of single crystal diamond |
| 01/08/2014 | CN203382855U Sleeve-type graphite heater for GaAs crystal growth |
| 01/08/2014 | CN203382854U Crucible clamping tool special for sapphire growth equipment |
| 01/08/2014 | CN203382853U Vacuum sealing and insulating structure for heater electrode and furnace body of pseudo-single crystal ingot furnace |
| 01/08/2014 | CN203382852U Variable heater high-efficient polycrystalline silicon ingot casting furnace |
| 01/08/2014 | CN203382851U Testing device for melting thickness of seed crystals of pseudo-single crystal ingot furnace |
| 01/08/2014 | CN203382850U Polycrystalline silicon ingot furnace thermal field heating device |
| 01/08/2014 | CN203382848U High-efficient polycrystalline silicon ingot casting furnace with heat insulation protective plate |