Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
03/2014
03/26/2014CN103668461A Method for preparing nickel-based superalloy Rene80 directionally-grown column crystal/single crystal alloy and manufacturing parts
03/26/2014CN103668460A Group 13 nitride crystal, group 13 nitride crystal substrate, and method of manufacturing group 13 nitride crystal
03/26/2014CN103668459A Chromium-doped lithium tungstate magnesium crystal as well as preparation and application thereof
03/26/2014CN103668458A Hafnium, neodymium, ytterbium and thulium doped lithium niobate crystal and preparation method thereof
03/26/2014CN103668457A Method for improving internal quality of yttrium vanadate crystals
03/26/2014CN103668456A Method for recycling terbium gallium garnet crystal growth oddments
03/26/2014CN103668455A Growing device and growing method of lithium triborate (LBO) crystal
03/26/2014CN103668454A Water cooled electrode of sapphire single crystal furnace
03/26/2014CN103668453A Two-dimensional silylene film and preparation method thereof
03/26/2014CN103668452A Ingot furnace
03/26/2014CN103668451A Polysilicon ingot furnace
03/26/2014CN103668450A Ingot casting technology capable of reducing generation of fine grains in polycrystalline silicon ingot
03/26/2014CN103668449A Solid-liquid interface determination device for silicon ingot furnace
03/26/2014CN103668448A Vapor phase epitaxy method for gold-P doped HgCdTe material
03/26/2014CN103668447A Preparation device and preparation method for preparing same or similar lattice orientation graphene
03/26/2014CN103668446A Controllable precursor passage
03/26/2014CN103668445A Hetero-epitaxy monocrystal, hetero-junction solar cell, and manufacture methods thereof
03/26/2014CN103668444A Method and device for growing CdS single crystal
03/26/2014CN103668443A Group III nitride semiconductor single crystal, method for producing same, self-standing substrate, and semiconductor device
03/26/2014CN103668442A Nesting sleeve for heat isolation screen observing hole on sapphire single crystal furnace
03/26/2014CN103668441A Vertical-pull method for silicon single crystal rod and prepared silicon single crystal rod employing same
03/26/2014CN103668440A Monocrystal silicon czochralski method heat shield adjustment process
03/26/2014CN103668439A High-frequency coil for producing twelve or thirteen silicon cores
03/26/2014CN103668438A Graphite crucible used for preparing monocrystalline silicon by czochralski method
03/26/2014CN103668437A Crucible used for preparing monocrystalline silicon by czochralski method
03/26/2014CN103668435A Method for producing silicon single crystal
03/26/2014CN103668434A High-frequency coil for producing fifteen or sixteen silicon cores
03/26/2014CN103668433A High-frequency coil for producing twelve or thirteen silicon cores
03/26/2014CN103668432A High-frequency coil for producing ten or eleven silicon cores
03/26/2014CN103668431A High-frequency coil for producing nine or ten silicon cores
03/26/2014CN103668430A High-frequency coil for producing sixteen or seventeen silicon cores
03/26/2014CN103668429A High-frequency coil for producing thirteen or fourteen silicon cores
03/26/2014CN103668427A Method for casting large-sized silicon ingot
03/26/2014CN103668426A Method for preparing silicon single crystals by using zone continuous casting method
03/26/2014CN103668425A Method for recycling copper whiskers from copper-bearing solution by using hydroxyapatite
03/26/2014CN103668424A Method utilizing calcium carbide slag as raw material to produce gypsum crystal whisker
03/26/2014CN103668106A Method for preparing monolayer hexagonal boron nitride
03/26/2014CN103668069A Two-dimensional silylene film and preparation method thereof
03/26/2014CN103663365A Diaryl fluorine pi accumulated small molecule organic nanostructure and transistorized memory thereof
03/26/2014CN102425009B KDP crystal all-dimension growing device
03/26/2014CN102409395B Gallium element doping device and method for Czochralski silicon
03/26/2014CN102392295B Weighing device for sapphire single crystal furnace
03/26/2014CN102341355B Method for calculating temperature distribution in crucible
03/26/2014CN102286776B Temperature control system for sapphire crystal growth by Kyropoulos
03/26/2014CN101949058B Group III nitride semiconductor free-standing substrate and method of manufacturing the same, group III nitride semiconductor device and method of manufacturing the same
03/25/2014US8679251 Method and an apparatus for growing a silicon single crystal from a melt
03/20/2014WO2014042054A1 Aluminum nitride substrate and group-iii nitride laminate
03/20/2014WO2014040446A1 Method for growing inn-based thin film material
03/20/2014WO2014014392A3 Method for producing nanocrystalline silicon-substituted hydroxyapatite
03/20/2014US20140077231 Diamond sensors, detectors, and quantum devices
03/20/2014US20140077222 Gallium Nitride Devices with Aluminum Nitride Alloy Intermediate Layer
03/19/2014EP2708921A1 Fuorite having excellent laser durability
03/19/2014EP2708622A2 Group 13 nitride crystal, group 13 nitride crystal substrate, and method of manufacturing group 13 nitride crystal
03/19/2014EP2708550A1 Preparation method for insulin glargine crystal
03/19/2014EP2707523A1 Diamond sensors, detectors, and quantum devices
03/19/2014CN203487281U Chassis of crystal growing equipment
03/19/2014CN203487280U Quartz crucible
03/19/2014CN203487278U Heat-isolating exhausting device and ingot furnace
03/19/2014CN203487277U Multi-rod-hole crucible sintering device for preparing MgF2 rodlike crystals
03/19/2014CN203485502U Quartz crucible coating for producing high-performance polycrystalline silicon ingot
03/19/2014CN103649385A SiC epitaxial wafer and method for producing same, and device for producing SiC epitaxial wafer
03/19/2014CN103649384A Rare earth reduced garnet systems and related microwave applications
03/19/2014CN103649383A A silica container for pulling up monocrystalline silicon and method for manufacturing same
03/19/2014CN103649382A Multilayer structure for a diamond growth and a method of providing the same
03/19/2014CN103649380A Automatic vision system for a crystal growth apparatus
03/19/2014CN103646858A Method for using SiGeC buffer layer to grow GaN on Si substrate
03/19/2014CN103643301A Method for annealing large-size calcium fluoride crystal
03/19/2014CN103643300A Annealing method applied to sapphire processing
03/19/2014CN103643298A Microwave solvothermal growth method for red light broadband transmitted nanocrystal array
03/19/2014CN103643297A Template method for preparing novel functional material nanometer Ag2Se
03/19/2014CN103643296A Synthetic method of nanometer AgGaS2 nonlinear optical crystal
03/19/2014CN103643295A Method for preparing raw material for vapor-method aluminum nitride crystal growth
03/19/2014CN103643294A Preparation method of silicon carbide microcrystalline homogenized in dimension and shaped in polyhedron form
03/19/2014CN103643293A Bismuth silicate scintillation crystal as well as preparation method and application thereof
03/19/2014CN103643292A Method and device for growing near-stoichiometric-ratio lithium niobate crystals
03/19/2014CN103643291A Single crystal furnace heat shield and preparation method thereof
03/19/2014CN103643290A Method for purifying high purify alumina for sapphire crystals
03/19/2014CN103643289A Single crystal silicon surface structure based on chemical etching, and preparation and application thereof
03/19/2014CN103643288A Preparation method of high-quality large-size monocrystal graphene
03/19/2014CN103643285A External charging mechanism for single crystal furnace
03/19/2014CN103641787A Chiral oxazolinyl cobalt complex and synthesis method thereof
03/19/2014CN102345165B Device for reducing warping degree of polycrystalline silicon slice
03/19/2014CN102332497B Manufacturing method of silicon epitaxial wafer for MMW (millimeter wave) avalanche diode
03/19/2014CN102234839B Method for preparing fullerene ultrathin single crystal band
03/18/2014US8674399 Semiconductor layer
03/18/2014US8673254 Monocrystalline silicon carbide ingot, monocrystalline silicon carbide wafer and method of manufacturing the same
03/18/2014CA2816457C Method of imaging in crystalline colloidal arrays
03/13/2014WO2014039937A1 Metal chalcogenide synthesis method and applications
03/13/2014WO2014039649A1 Selectively leached, polycrystalline structures for cutting elements of drill bits
03/13/2014WO2014038634A1 Epitaxial wafer and method for producing same
03/13/2014WO2014038221A1 Method for preparing crystal structure analysis sample, method for determining molecular structure of organic compound, and device for preparing crystal structure analysis sample
03/13/2014WO2014038220A1 Guest-compound-enveloping polymer-metal-complex crystal, method for producing same, method for preparing crystal structure analysis sample, and method for determining molecular structure of organic compound
03/13/2014WO2014038172A1 APPARATUS AND METHOD FOR MANUFACTURING SiC SINGLE CRYSTAL
03/13/2014WO2014038166A1 Single crystal production device, crucible used in same, and single crystal production method
03/13/2014WO2014037965A1 Method of loading a charge of polysilicon into a crucible
03/13/2014WO2014037878A1 Method for manufacturing a monolithic silicon wafer comprising multiple vertical junctions
03/13/2014US20140073781 Process for obtaining a charge of hexanitrohexaazaisowurtzitane crystals having a rounded morphology; charge and corresponding energetic material
03/13/2014US20140070370 Group iii nitride semiconductor single crystal, method for producing the same, self-standing substrate, and semiconductor device
03/13/2014US20140070105 Scintillator, method of fabricating the same and x-ray detector including the scintillator
03/13/2014DE19700516B4 Einkristall-Ziehvorrichtung Single crystal pulling apparatus
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