| Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302) |
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| 09/14/2011 | EP1723086B2 Method of incoporating a mark in cvd diamond |
| 09/14/2011 | EP1664396B1 A method of fabricating an epitaxially grown layer |
| 09/14/2011 | CN102181924A Growth method of graphene and graphene |
| 09/14/2011 | CN102181923A Vapor phase epitaxy device and vapor phase epitaxy method |
| 09/14/2011 | CN102181922A Quartz container used for isothermal crystal vapor phase epitaxy process |
| 09/14/2011 | CN102181921A Method for preparing polarity controllable zinc oxide by adopting metal source chemical vapor deposition technology |
| 09/13/2011 | US8016943 Method for preparing atomistically straight boundary junctions in high temperature superconducting oxides |
| 09/09/2011 | WO2011108640A1 Crystal growing apparatus, method for manufacturing nitride compound semiconductor crystal, and nitride compound semiconductor crystal |
| 09/09/2011 | WO2011108519A1 Semiconductor epitaxial substrate |
| 09/08/2011 | US20110217505 Low-Defect nitride boules and associated methods |
| 09/08/2011 | US20110215440 Method of Manufacturing III Nitride Crystal, III Nitride Crystal Substrate, and Semiconductor Device |
| 09/07/2011 | CN102177275A Epitaxial reactor for silicon deposition |
| 09/07/2011 | CN102176496A Amorphous silicon solar cell optimized by modulating energy band structure of intrinsic layer via hydrogen and manufacturing method thereof |
| 09/07/2011 | CN102174713A Group iii-v nitride-based semiconductor substrate, its manufacturing method, and group iii-v nitride-based semiconductor |
| 09/07/2011 | CN102174712A (al, in, ga)n substrate, its manufacturing method, microelectronic or opto-electronic device product |
| 09/07/2011 | CN102174708A Epitaxial growth of compound nitride semiconductor structures |
| 09/07/2011 | CN102174706A Semiconductor sequence body |
| 09/07/2011 | CN102174692A Method for producing an epitaxially coated semiconductor wafer |
| 09/07/2011 | CN101451266B Telescopic arm for grasping silicon wafer and locating method thereof |
| 09/06/2011 | CA2496710C Single crystal diamond |
| 09/01/2011 | WO2011106580A2 Carbon-based containment system |
| 09/01/2011 | WO2011105010A1 Semiconductor substrate support susceptor for vapor-phase epitaxy, epitaxial wafer manufacturing device, and epitaxial wafer manufacturing method |
| 09/01/2011 | WO2011104740A1 Cvd processing method and cvd device using said method |
| 09/01/2011 | US20110210425 Formation of group iii-v material layers on patterned substrates |
| 09/01/2011 | US20110209660 Methods and apparatus for deposition processes |
| 08/31/2011 | CN102169820A Method for preparing GaAs imaging substrate distributed in different stress densities |
| 08/31/2011 | CN102168309A Method for preparing p-type IIB-VIA family quasi-one-dimensional semiconductor nano material by chemical vapor-deposition in-situ doping |
| 08/31/2011 | CN102168304A Method for producing a semiconductor wafer composed of silicon with an epitaxially deposited layer |
| 08/31/2011 | CN101812725B Growth method of phase-change nucleation in epitaxy of gallium nitride |
| 08/31/2011 | CN101476152B Preparation of single crystal ZnSe/Ge heterojunction nano-wire |
| 08/31/2011 | CN101311351B Polycrystalline silicon rod for zone refining and a process for the production thereof |
| 08/31/2011 | CN101261952B Substrate carrying bench and substrate treatment device |
| 08/25/2011 | US20110207008 Induction for thermochemical processes, and associated systems and methods |
| 08/25/2011 | US20110204329 NON-POLAR (Al,B,In,Ga)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES |
| 08/25/2011 | DE102011004247A1 Verfahren zur Herstellung eines Siliziumkarbid-Substrats A method for producing a silicon carbide substrate |
| 08/25/2011 | DE102010002342A1 Verwendung der spezifischen Widerstandsmessung zur indirekten Bestimmung der Reinheit von Silanen und Germanen und ein entsprechendes Verfahren Use of the resistivity measurement for the indirect determination of the purity of silanes and Germans and method |
| 08/24/2011 | EP2360298A2 Method for depositing a semiconductor nanowire |
| 08/24/2011 | EP2360297A2 Vapor deposition system, method of manufacturing light emitting device and light emitting device |
| 08/24/2011 | CN201942790U 外延设备 Epitaxy equipment |
| 08/24/2011 | CN102163650A Growth reactor for spherical semiconductor photovoltaic device |
| 08/24/2011 | CN102162137A High quality strain Ge/SiGe super-lattice structure and preparation method thereof |
| 08/24/2011 | CN102162129A Method for preparing p-type zinc oxide nano rod array |
| 08/23/2011 | US8003165 Overcoating copper catalyst with alumina nanoparticles |
| 08/23/2011 | US8002892 Group III nitride crystal substrate, method of its manufacture, and group III nitride semiconductor device |
| 08/18/2011 | WO2011098420A1 Gas inlet member with baffle plate arrangement |
| 08/18/2011 | US20110197808 Crystal growth method for nitride semiconductor |
| 08/17/2011 | CN1972880B Method for doping material and doped material |
| 08/17/2011 | CN1972879B Selective doping of a material |
| 08/17/2011 | CN102157903A Epitaxial growth method of W type antimonide class II quantum well |
| 08/17/2011 | CN102157353A Method for preparing diamond substrate for high-heat-conductivity integrated circuit |
| 08/17/2011 | CN102154706A Method for preparing one-dimension nano materials |
| 08/17/2011 | CN102154691A Slit type multi-gas transmission spray nozzle structure |
| 08/17/2011 | CN102154690A Method and device for forming tray in planetary epitaxial growth equipment |
| 08/17/2011 | CN102154689A Vapor deposition system, method of manufacturing light emitting device and light emitting device |
| 08/17/2011 | CN101256935B Method and apparatus for controlling gas flow to a processing chamber |
| 08/16/2011 | CA2491941C Nanostructures and methods for manufacturing the same |
| 08/11/2011 | US20110193196 Indium Phosphide Substrate Manufacturing Method, Epitaxial Wafer Manufacturing Method, Indium Phosphide Substrate, and Epitaxial Wafer |
| 08/10/2011 | EP2353176A2 Reaction chamber |
| 08/10/2011 | EP2160759B1 Device for coating a plurality of closest-packed substrates arranged on a susceptor |
| 08/10/2011 | EP1631986B1 A method of preparation of an epitaxial substrate |
| 08/10/2011 | CN102149857A Substrate, epitaxial layer provided substrate, method for producing substrate, and method for producing epitaxial layer provided substrate |
| 08/10/2011 | CN102148141A GaN衬底和半导体器件 GaN substrate and a semiconductor device |
| 08/10/2011 | CN102146585A Non-polar surface GaN epitaxial wafer and preparation method of non-polar surface GaN epitaxial wafer |
| 08/09/2011 | US7993453 Method for producing silicon carbide single crystal |
| 08/05/2011 | CA2727509A1 Method of preparing organometallic compounds |
| 08/04/2011 | DE102010006725A1 Verfahren zur Herstellung einer Halbleiterscheibe aus Silizium mit einer epitaktisch abgeschiedenen Schicht A process for producing a semiconductor wafer of silicon having an epitaxially deposited layer |
| 08/03/2011 | CN102140696A Doped III-N bulk crystal and self-supporting doped III-N substrate |
| 08/03/2011 | CN102140687A Preparation method of single-crystal titanium dioxide |
| 08/03/2011 | CN102140680A Method for preparing gallium nitride single crystal |
| 08/03/2011 | CN102140679A Vapor phase epitaxy apparatus of group III nitride semiconductor |
| 08/03/2011 | CN102140678A Method, device and CVD-Siemens system for producing uniform polysilicon rod |
| 07/28/2011 | US20110183528 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride |
| 07/28/2011 | US20110179993 Crystal growth process for nitride semiconductor, and method for manufacturing semiconductor device |
| 07/27/2011 | EP2347028A1 Method and apparatus for chemical vapor deposition |
| 07/27/2011 | CN102137961A Group III nitride crystal and production method thereof |
| 07/27/2011 | CN102134743A Manufacturing apparatus and manufacturing method of silicon carbide single crystal |
| 07/27/2011 | CN102134742A Manufacturing method of conductive group III nitride crystal, manufacturing method of conductive group III nitride substrate and conductive group III nitride substrate |
| 07/26/2011 | CA2652493C Apparatus and methods for preparation of high-purity silicon rods using mixed core means |
| 07/21/2011 | WO2011087061A1 Single-crystal substrate, group iii element nitride crystal obtained using same, and process for produicng group iii element nitride crystal |
| 07/21/2011 | WO2011086164A1 Cvd single crystal diamond material |
| 07/21/2011 | US20110177682 Suppression of oxygen precipitation in heavily doped single crystal silicon substrates |
| 07/21/2011 | US20110177681 Method of Producing High Quality Relaxed Silicon Germanium Layers |
| 07/21/2011 | US20110174213 Vapor Phase Epitaxy System |
| 07/21/2011 | US20110174212 Epitaxial chamber with cross flow |
| 07/21/2011 | DE102010005100A1 Verfahren zur Herstellung von Halbleiterscheiben aus Silizium mit einem Durchmesser von mindestens 450 mm und Halbleiterscheibe aus Silizium mit einem Durchmesser von 450 mm A process for the production of semiconductor wafers of silicon having a diameter of at least 450 mm and the semiconductor wafer of silicon having a diameter of 450 mm |
| 07/20/2011 | CN102131957A UV absorption based monitor and control of chloride gas stream |
| 07/20/2011 | CN102130223A Method for coarsening surface of GaN-based LED epitaxial wafer |
| 07/20/2011 | CN102130208A Method for manufacturing photoelectric detection unit or focal plane device by using molecular beam epitaxy method |
| 07/20/2011 | CN102129970A Method for manufacturing semiconductor device |
| 07/20/2011 | CN102127815A Manufacturing method of group IIIA nitride semiconductor crystal and manufacturing method of group IIIA nitride semiconductor substrate |
| 07/20/2011 | CN102127808A Independent metal source system of semiconductor growth equipment |
| 07/20/2011 | CN102127807A Method for preparing ternary-component AlxGaI-xN nanocone |
| 07/20/2011 | CN102127755A Direct current glow plasma device and preparation method of diamond chip |
| 07/20/2011 | CN101671842B Method for growing Na-N co-doping p-type ZnO crystal film by annealing |
| 07/20/2011 | CN101469448B Method for growth of large size high quality zinc oxide single crystal thick film on sapphire |
| 07/20/2011 | CN101235538B Electric arc atomization auxiliary preparation method for four-needle type zinc oxide crystal whisker |
| 07/19/2011 | US7982208 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices |
| 07/19/2011 | US7981791 Thin films |
| 07/19/2011 | US7981721 Diamond transistor and method of manufacture thereof |
| 07/19/2011 | CA2442575C Process and device for the deposition of an at least partially crystalline silicium layer on a substrate |