Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth
Patents for C30B 25 - Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour deposition growth (13,302)
05/2012
05/30/2012CN101922042B Epitaxial wafer tray and support and rotation connecting device matched with same
05/30/2012CN101633628B Method for controllably preparing multi-shape copper-tetracyano-p-benzoquinone dimethane nano structure
05/30/2012CN101319359B 单晶金刚石 Single crystal diamond
05/30/2012CN101220505B Gas supply system, gas supply method, method of cleaning thin film forming apparatus, thin film forming method and thin film forming apparatus
05/29/2012US8188458 Non-polar (Al,B,In,Ga)N quantum well and heterostructure materials and devices
05/29/2012US8187956 Method for manufacturing microcrystalline semiconductor film, thin film transistor having microcrystalline semiconductor film, and photoelectric conversion device having microcrystalline semiconductor film
05/29/2012US8187380 Method of growing single crystal diamond in a plasma reactor
05/29/2012US8187379 Method of producing high quality relaxed silicon germanium layers
05/24/2012WO2012067112A1 Method for producing epitaxial silicon carbide single crystal substrate
05/24/2012US20120125256 Apparatus and method for repeatedly fabricating thin film semiconductor substrates using a template
05/23/2012CN102468124A 一种利用Al插入层外延生长NiSiGe材料的方法 A method for inserting NiSiGe material layer is epitaxially grown using Al
05/23/2012CN102465343A Method of manufacturing gan-based film
05/23/2012CN102465337A 一种多片多源卧式氢化物气相外延生长系统 A multi-chip multi-source horizontal hydride vapor phase epitaxy system
05/23/2012CN102465336A 一种高锗浓度的锗硅外延方法 Of a high concentration of germanium silicon germanium epitaxy
05/23/2012CN102465335A 一种用于半导体材料热壁外延生长系统的加热装置 A heating device hot wall epitaxial growth of semiconductor material systems for
05/23/2012CN102465334A 一种氮化镓基led外延层的生长方法 A gallium nitride-based epitaxial layers grown led
05/23/2012CN102465333A 一种立式氢化物气相外延生长系统 To provide a vertical hydride vapor phase epitaxy system
05/23/2012CN101203633B Device for introducing reaction gases into a reaction chamber and epitaxial reactor which uses said device
05/23/2012CN101120124B Process for producing silicon carbide single crystal
05/23/2012CN101111628B Method and apparatus for monolayer deposition (mld)
05/17/2012US20120119223 Gallium Nitride Semiconductor Structures with Compositionally-Graded Transition Layer
05/17/2012US20120118227 Apparatus for forming layer
05/17/2012US20120118226 Method of Synthesizing Nitride Semiconductor Single-Crystal Substrate
05/17/2012US20120118225 Epitaxial growth temperature control in led manufacture
05/17/2012US20120118224 Transfer chamber metrology for improved device yield
05/17/2012US20120118222 METHOD OF MANUFACTURING GaN-BASED FILM
05/16/2012EP2453043A1 Method of manufacturing nitride semiconductor substrate
05/16/2012CN202220200U Reactor used for chemical vapor deposition process
05/16/2012CN102456551A 外延生长方法 Epitaxial growth
05/16/2012CN102453958A Method for reducing epitaxy auto-doping effect
05/16/2012CN102453957A Method for reducing germanium/silicon epitaxy surface defects
05/10/2012WO2012059844A1 Method of forming a composite substrate.
05/10/2012WO2012059843A1 Iii-nitride layer grown on a substrate
05/10/2012US20120112320 Nitride semiconductor crystal and production process thereof
05/10/2012US20120112198 Epitaxial growth of silicon carbide on sapphire
05/09/2012CN101503824B Nitride semiconductor single-crystal substrate and method of its synthesis
05/09/2012CN101451272B Silicon nitride production method capable of reducing cavity formation probability in metal front medium layer
05/09/2012CN101307488B Polycrystalline silicon thin film preparation method
05/08/2012US8174089 High voltage switching devices and process for forming same
05/03/2012WO2012056928A1 Method for manufacturing optical element
05/03/2012US20120104565 Epitaxial wafer and method for producing the same
05/03/2012US20120104557 Method for manufacturing a group III nitride crystal, method for manufacturing a group III nitride template, group III nitride crystal and group III nitride template
05/03/2012US20120104461 Semiconductor Heterostructures Having Reduced Dislocation Pile-Ups and Related Methods
05/03/2012US20120103250 Film of n type (100) oriented single crystal diamond semiconductor doped with phosphorous atoms, and a method of producing the same
05/03/2012US20120103249 Sic single crystal sublimation growth method and apparatus
05/02/2012EP2446485A1 Epitaxial wafer and manufacturering method thereof
05/02/2012EP2446072A1 Method for making fancy orange coloured single crystal cvd diamond and product obtained
05/02/2012EP2119815B1 Method for manufacturing self-supporting nitride semiconductor substrate
05/02/2012CN102433586A Method for epitaxial growth of wafer-level graphene on 4H/6H-SiC (0001) surface
05/02/2012CN101985774B Method for synthesizing single crystal nano wire array
05/02/2012CN101962804B Epitaxial material stress control-based GaN thick film self-separation method
05/01/2012US8168000 III-nitride semiconductor device fabrication
04/2012
04/26/2012WO2012052513A1 Method for producing a low dislocation density iii-nitride crystal
04/26/2012US20120098102 Defect reduction of non-polar and semi-polar iii-nitrides with sidewall lateral epitaxial overgrowth (sleo)
04/26/2012US20120098034 Epitaxial Growth of Crystalline Material
04/26/2012US20120097105 Molecular beam epitaxy apparatus for producing wafers of semiconductor material
04/25/2012EP2443274A1 Method for equipping an epitaxy reactor
04/25/2012CN1958878B Method of using film formation apparatus
04/25/2012CN1701417B Substrate-processing apparatus and method of producing semiconductor device
04/25/2012CN102428216A MOCVD reactor having a ceiling panel coupled locally differently to a heat dissipation member
04/25/2012CN102428028A 用于硅生长棒的容纳锥形件 For accommodating the growth cone piece of silicon rods
04/25/2012CN102427103A 氮化镓基ⅲ-ⅴ族化合物半导体led外延片及其生长方法以及包括其的led显示装置 GaN-based ⅲ-ⅴ compound semiconductor epitaxial wafer led its growth method and apparatus including led display
04/25/2012CN101967679B 一种氧化锌晶须形貌的调控方法 A method of regulating the morphology of zinc oxide whisker
04/25/2012CN101064258B 高取向性硅薄膜形成方法、三维半导体器件及其制造方法 The highly oriented silicon film forming method, three-dimensional semiconductor device and its manufacturing method
04/24/2012US8163573 Method for manufacturing nitride semiconductor element
04/24/2012US8163444 Mask for crystallizing a semiconductor layer and method of crystallizing a semiconductor layer using the same
04/24/2012US8163085 Method and apparatus for forming protective layer
04/19/2012WO2012049510A1 Heterogrowth
04/19/2012WO2012049304A1 Method for fabricating a free-standing group iii nitride substrate
04/19/2012WO2012012457A3 Polycrystalline silicon production
04/19/2012US20120091471 Lightly doped silicon carbide wafer and use thereof in high power devices
04/19/2012US20120090536 Method for producing silicon epitaxial wafer
04/19/2012US20120090535 Method of Fabricating Semiconductor Device
04/18/2012EP2441086A2 Continuous feed chemical vapor deposition system
04/18/2012EP1660697B1 Vertical flow rotating disk reactor and method using the same
04/18/2012CN102418146A 一种提高GaN基LED发光效率的外延方法 A luminous efficiency of GaN-based LED epitaxial methods to improve
04/18/2012CN102418145A 在图形衬底上生长GaN基LED外延片的方法 On the graphics substrate GaN-based LED epitaxial wafer growth method
04/18/2012CN102418143A 一种以H<sub>3</sub>PO<sub>4</sub>腐蚀衬底制备自剥离GaN单晶的方法 A to H <sub> 3 </ sub> PO <sub> 4 </ sub> substrate corrosion self-release preparation of GaN single crystal
04/12/2012WO2012046676A1 Epitaxial wafer, light-receiving element, optical sensor device, and method for manufacturing epitaxial wafer and light-receiving element
04/12/2012DE102007021944B4 Freistehendes Nitrid-Halbleitersubstrat und lichtemittierende Vorrichtung Detached nitride semiconductor substrate and light emitting device
04/11/2012EP2439769A1 Apparatus with multiple heating systems for in-line thermal treatment of substrates
04/11/2012EP2439316A1 Nitride semiconductor crystal and method for manufacturing same
04/11/2012CN102414351A 氮化物半导体基板的制造方法 The method of manufacturing a nitride semiconductor substrate,
04/11/2012CN102409406A 低位错氮化镓的生长方法 Low dislocation GaN growth method
04/11/2012CN102409400A Led外延生长装置 Led epitaxial growth apparatus
04/11/2012CN102409399A 一种高质量石墨烯的制法 A high quality graphene prepared by
04/11/2012CN101685791B 基片支承装置及其静电释放方法 Substrate support apparatus and method for electrostatic discharge
04/10/2012US8153833 Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitride
04/10/2012US8153470 Doped elongated semiconductors, growing such semiconductors, devices including such semiconductors, and fabricating such devices
04/10/2012US8152919 Epitaxial silicon wafer and fabrication method thereof
04/10/2012US8152918 Methods for epitaxial silicon growth
04/05/2012WO2012044251A1 Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system
04/05/2012WO2012043885A1 Method for producing substrate for group iii nitride semiconductor element fabrication, method for producing group iii nitride semiconductor free-standing substrate or group iii nitride semiconductor element, and group iii nitride growth substrate
04/05/2012WO2012042035A1 Thermalizing gas injectors, material deposition systems, and related methods
04/05/2012US20120083060 Integration of cluster mocvd and hvpe reactors with other process chambers
04/05/2012CA2812616A1 Method of producing white colour monocrystalline diamonds
04/04/2012EP2437286A1 GaN single-crystal substrate
04/04/2012EP2436801A1 Systems and methods for forming semiconductor materials by atomic layer deposition
04/04/2012CN102400220A 自诱导化学气相沉积法制备氧化钛纳米线的方法 Self-induced chemical vapor deposition method Preparation of titanium oxide nanowires
04/04/2012CN101144181B 半导体处理用的成膜装置及其使用方法 Forming a semiconductor processing apparatus and method of use
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