Patents
Sitemap › C30 - Crystal growth › C30B - Single-crystal growth; Unidirectional solidification of eutectic material or unidirectional demixing of eutectoid material; Refining by zone-melting of material; Production of a homogeneous polycrystalline material with defined structure; Single crystals or homogeneous polycrystalline material with defined structure; After-treatment of single crystals or a homogeneous polycrystalline material with defined structure; Apparatus therefor › C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
06/2013
06/26/2013CN103170645A Preparation method of silver nanowires
06/26/2013CN103170642A Preparation method of irregular icosahedron gold nanometer materials
06/26/2013CN102732962B Method for casting efficient large-crystal-grain silicon ingots
06/26/2013CN101233265B AIN crystal and method for growing the same, and AIN crystal substrate
06/25/2013CA2586974C Nickel-base superalloy
06/20/2013WO2013088948A1 METHOD FOR GROWING SiC CRYSTAL AND SiC CRYSTAL SUBSTRATE
06/20/2013WO2013088947A1 METHOD FOR GROWING SiC CRYSTAL
06/20/2013WO2013088916A1 Device and method for forming gallium nitride film, and hydrogenated gallium generator
06/20/2013WO2013088646A1 Method for producing silicon single crystal
06/20/2013WO2013088617A1 Silica container for pulling up single crystal silicon, and method for manufacturing same
06/20/2013WO2013087697A1 Single crystal cvd synthetic diamond material
06/20/2013WO2013087598A1 Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same
06/20/2013US20130157055 Nano-Particles Containing Carbon and a Ferromagnetic Metal or Alloy
06/20/2013US20130153928 Method for controlled growth of silicon carbide and structures produced by same
06/20/2013US20130153836 Method of producing silicon carbide single crystal, silicon carbide single crystal, and silicon carbide single crystal substrate
06/20/2013DE102010044017B4 Verfahren zur Herstellung von Alkali- oder Erdalkalifluorid-Kristallen und nach dem Verfahren hergestellte Kristalle Process for the preparation of alkali or alkaline earth fluoride crystals and crystals made according to the process
06/19/2013EP2604728A1 Crucible for the production of crystalline semiconductor ingots and process for manufacturing the same
06/19/2013EP2603584A1 Method for using ref protein as a targeted reca-dependent nuclease
06/19/2013CN203007503U Device for observing growth of sapphire crystals
06/19/2013CN203007499U Novel observing window mechanism for sapphire crystal growth equipment
06/19/2013CN203007496U Sapphire annealing tool
06/19/2013CN203007482U Sintering furnace for preparing alpha-Al2O3 by using gamma-Al2O3
06/19/2013CN203007481U Ingot furnace heating device
06/19/2013CN203007480U Furnace self-locking device with information feedback function
06/19/2013CN203007479U Substrate supporting structure and deposition device
06/19/2013CN203007477U Structure of single-crystal furnace thermal field for growth of sapphire crystal
06/19/2013CN203007476U Seedholder mechanism used for growing of large-size sapphire single crystal
06/19/2013CN203007473U Automatic separating appliance for silicon materials
06/19/2013CN203007472U Crystal growth furnace
06/19/2013CN203007471U Single crystal furnace
06/19/2013CN203007470U Furnace bottom protection plate of single crystal furnace
06/19/2013CN203007469U Thermal field device of czochralski crystal growing furnace
06/19/2013CN103168117A Crystal growth apparatus with ceramic coating and methods for preventing molten material breach in a crystal growth apparatus
06/19/2013CN103165408A Strain silicon (Si) preparation method by embedding superlattice
06/19/2013CN103160929A Preparation method of monocrystalline AlN nanocones and nanosheets
06/19/2013CN103160928A Seed crystal processing method for growing SiC monocrystal with high quality
06/19/2013CN103160927A Water-soluble borate crystal with new formula
06/19/2013CN103160926A Method for growing polycrystalline silicon by virtue of hollow silicon core
06/19/2013CN103160925A Soft water absorption nanometer salt crystal with new formula
06/19/2013CN103160924A Multi-tube device for quickly synthesizing indium phosphide polycrystal phosphorus bubbles
06/19/2013CN103160921A Preparation method of silicon-doped titanium oxide nanowires with super-hydrophilic performance
06/19/2013CN103160920A Heating body structure of single crystal growth furnace
06/19/2013CN103160919A Heating electrodes in sapphire crystal Kyropoulos production device
06/19/2013CN103160918A Preparation furnace and preparation method of pseudo single crystal silicon
06/19/2013CN103160917A Drawing die plate for hollow silicon core
06/19/2013CN103160916A Drawing die plate for specially-shaped silicon core
06/19/2013CN103160915A Drawing die plate for C-shaped silicon core
06/19/2013CN103160914A Drawing method for C-shaped silicon core
06/19/2013CN103160911A Method for BiFe1-xCoxO3 series crystal growth
06/19/2013CN103160910A Method for growing Ba8Ga16Ge30 thermoelectric monocrystal
06/19/2013CN103160809A Gas dispersion device used in a growth process of wafer polycrystalline silicon film and growth process
06/19/2013CN103160785A Manufacture method for nitrogen-magnesium co-doping p-type zinc oxide film
06/19/2013CN103157807A Method for preparing silver nanowire
06/19/2013CN103157806A Method using switch surface active agent reverse micelle to prepare nanosized palladium
06/19/2013CN102296366B Synthetic method of LiGaS2 polycrystalline
06/19/2013CN102296364B Inorganic infrared non-linear optical crystal material and preparation method thereof
06/19/2013CN102268726B Solar energy single crystal growth process using CZ (Czochralski) method
06/19/2013CN102226299B Hydrothermal synthesis method of zinc borate whisker
06/18/2013US8466471 Nitride semiconductor free-standing substrate and method for making same
06/13/2013WO2013086273A1 Method of forming carbonaceous particles and articles therefrom
06/13/2013WO2013085907A1 Inert gas recovery and recycle for silicon crystal growth pulling process
06/13/2013WO2013085417A1 Crucible for evaporating aluminium in an epitaxy process
06/13/2013WO2013084410A1 Method for evaluating silicon single crystal and method for producing silicon single crystal
06/13/2013US20130150247 Methods for forming superconductor articles and xrd methods for characterizing same
06/13/2013US20130149528 Oxide substrate and manufacturing method therefor
06/13/2013US20130145983 Process for preparing the crystalline form a of (2-[3-cyano-4-(2-i-butoxy)phenyl]-4-methyl-5-thiazole-carboxylic acid (febuxostat)
06/13/2013DE112011102485T5 Vorrichtung und Verfahren zum Herstellen eines Halbleiter-Einkristalls Apparatus and method for manufacturing a semiconductor single crystal
06/12/2013EP2602362A1 Group iii nitride crystal growing method
06/12/2013EP2601132A2 A diamond optical element
06/12/2013CN202989353U Furnace special for impurity silicon polysilicon ingot
06/12/2013CN202989352U Polycrystalline furnace cavity lifting device with clamping flange
06/12/2013CN202989351U Ingot furnace thermal field structure based on multiple heaters
06/12/2013CN202989350U Sapphire growth furnace crucible heating mechanism
06/12/2013CN202989349U High-frequency coil for producing six or seven silicon cores
06/12/2013CN202989348U High-frequency coil for producing ten or eleven silicon cores
06/12/2013CN202989347U High-frequency coil for producing fifteen or sixteen silicon cores
06/12/2013CN202989346U High-frequency coil for producing sixteen or seventeen silicon cores
06/12/2013CN202989343U Sapphire single crystal pulling device
06/12/2013CN202989341U High-frequency coil for producing five or six silicon cores
06/12/2013CN202989340U High-frequency coil for producing seven or eight silicon cores
06/12/2013CN202989339U High-frequency coil for producing eight or nine silicon cores
06/12/2013CN202989338U High-frequency coil for producing nine or ten silicon cores
06/12/2013CN202989337U High-frequency coil for producing eleven or twelve silicon cores
06/12/2013CN202989336U High-frequency coil for producing twelve or thirteen silicon cores
06/12/2013CN202989335U High-frequency coil for producing thirteen or fourteen silicon cores
06/12/2013CN202989334U High-frequency coil for producing fourteen or fifteen silicon cores
06/12/2013CN202989333U High-frequency coil for producing eighteen or nineteen silicon cores
06/12/2013CN202989332U High frequency coil capable of producing nine silicon cores or ten silicon cores
06/12/2013CN202989330U Novel polycrystalline furnace heating device
06/12/2013CN103154332A Silicon melt contacting member and process for production thereof, and process for production of crystalline silicon
06/12/2013CN103154312A Thermalizing gas injectors, material deposition systems, and related methods
06/12/2013CN103147130A Preparation method of transition metal element doped zinc oxide (ZnO) nanometer array and semiconductor device with the same
06/12/2013CN103147129A Method for growing a crystalline composition comprising gallium nitride
06/12/2013CN103147128A Manganese vanadate nanoneedle structure and synthesis method thereof
06/12/2013CN103147127A Apparatus for growing moisture-absorbing monocrystals
06/12/2013CN103147126A Cooling apparatus for growing sapphire single crystal
06/12/2013CN103147125A Method for preparing low-cost powdery polycrystalline-silicon base nanowire
06/12/2013CN103147123A Micron-sized organic micromolecule single-crystal material and preparation method thereof
06/12/2013CN103147122A Controlling agglomerated point defect and oxygen cluster formation induced by the lateral surface of silicon single crystal during CZ growth
06/12/2013CN103147121A Device for growing crystals by using lifting and Kyropoulos method
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