| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 05/08/2013 | CN103088407A Method For Solidifying A Semiconductor With Adding Charges Of A Doped Semiconductor During The Crystallisation |
| 05/08/2013 | CN103088406A Seed crystal preparation method and monocrystalline-silicon-like ingot casting method |
| 05/08/2013 | CN103088405A Crystalline silicon ingot making method and crystalline silicon ingot |
| 05/08/2013 | CN103088404A Apparatus For Producing A Sheet |
| 05/08/2013 | CN103088403A Method Of Fabricating Crystalline Silicon Ingot |
| 05/08/2013 | CN103088401A Method for growing KTiOAsO4 crystal by adopting novel fluxing agent molten-salt method |
| 05/08/2013 | CN103088400A Method for preparing high-purity magnesium oxide whisker by adopting alcohol-hydrothermal method |
| 05/08/2013 | CN103088311A Method of forming seed layer and method of forming silicon-containing thin film |
| 05/08/2013 | CN103086988A Phenyl bistriazole compound, and preparation method and application thereof |
| 05/08/2013 | CN103084581A Preparation method for copper nanowire |
| 05/08/2013 | CN102268736B Method for preparing silicon carbide nanowire array through gas phase interlayer diffusion reaction process |
| 05/02/2013 | WO2013062958A1 Construction and composition of preformed containers used in a high-pressure press |
| 05/02/2013 | WO2013062130A1 Method for producing crystal |
| 05/02/2013 | WO2013062042A1 Method for producing nitride crystal, and nitride crystal |
| 05/02/2013 | WO2013061788A1 Method for manufacturing silicon carbide substrate, and silicon carbide substrate |
| 05/02/2013 | WO2013061572A1 Film formation method, vacuum treatment device, method for producing semiconductor light-emitting element, semiconductor light-emitting element, and illumination device |
| 05/02/2013 | WO2013036376A3 Methods for the epitaxial growth of silicon carbide |
| 05/02/2013 | WO2013029451A9 Method for sintering alumina powder into alumina block material by using flame fusion for preparing sapphire crystal |
| 05/02/2013 | WO2012170259A3 Rare earth reduced garnet systems and related microwave applications |
| 05/02/2013 | WO2012170124A3 Heater assembly for crystal growth apparatus |
| 05/02/2013 | US20130108877 Crystalline strontium titanate and methods of forming the same |
| 05/01/2013 | EP2587556A1 Sapphire substrate, method for producing same, and nitride semiconductor light emitting element |
| 05/01/2013 | EP2586745A1 A vacuum recycling apparatus and method for refining solar grade polysilicon |
| 05/01/2013 | CN202913090U Vacuum system of sapphire crystal growth furnace |
| 05/01/2013 | CN202913087U Ceramic crucible for polycrystalline silicon ingot |
| 05/01/2013 | CN202913086U Heat insulating unit for growing crystals |
| 05/01/2013 | CN202913085U Casting device |
| 05/01/2013 | CN202913084U On-line temperature measuring equipment for sapphire crystal growth furnace |
| 05/01/2013 | CN202913083U Temperature transition ring for single crystal furnace |
| 05/01/2013 | CN103081062A Method for manufacturing compound semiconductor |
| 05/01/2013 | CN103080389A Carbon crucible |
| 05/01/2013 | CN103080388A Eddy current thickness measurement apparatus |
| 05/01/2013 | CN103078016A LED (Light Emitting Diode) epitaxial wafer deposition method and LED epitaxial wafer deposition equipment |
| 05/01/2013 | CN103074800A Method for coating and modifying surface of inorganic paper making fiber calcium sulfate whisker and application |
| 05/01/2013 | CN103074687A Preparation method of AgSbTe2 single-crystal nanowire array |
| 05/01/2013 | CN103074686A Method for preparing high-purity mullite monocrystal through kyanite concentrate at low temperature |
| 05/01/2013 | CN103074685A High concentration Nd-doped YAG laser crystal growth method |
| 05/01/2013 | CN103074684A Borate birefringent crystal for ultraviolet band as well as growing method and purpose of same |
| 05/01/2013 | CN103074683A Coaxial homogeneous ZnO pn junction nanorod and preparation method thereof |
| 05/01/2013 | CN103074682A Melting process for producing monocrystalline silicon |
| 05/01/2013 | CN103074681A Secondary feeding method |
| 05/01/2013 | CN103074680A Hafnium two-dimensional atomic crystal material and preparation method thereof |
| 05/01/2013 | CN103074679A Preparation method of single crystal grapheme through chemical vapor deposition |
| 05/01/2013 | CN103074678A Preparation method of single crystal grapheme |
| 05/01/2013 | CN103074677A Preparation method for zinc telluride homoepitaxy layer |
| 05/01/2013 | CN103074673A Substrate supporting structure and deposition device |
| 05/01/2013 | CN103074672A Gas phase epitaxial growth method of single crystal silicon |
| 05/01/2013 | CN103074671A Soaking method for reducing large size sapphire crystal bubble |
| 05/01/2013 | CN103074669A Polycrystalline silicon ingot, preparation method thereof and polycrystalline silicon chip |
| 05/01/2013 | CN103074667A Method for preparing calcium sulfate whisker through recrystallization |
| 05/01/2013 | CN103073050A Application of mercuric iodobromide as infrared band second-order nonlinear optical material |
| 05/01/2013 | CN103071809A Preparation method for platinum nanowire |
| 05/01/2013 | CN102162136B Method for quick preparation of large-area two-dimensional colloidal crystal |
| 05/01/2013 | CN102154695B Nickel oxide nano rod array material, method for preparing same and application thereof |
| 05/01/2013 | CN102140690B Photoluminescent wafer as well as preparation method and application thereof |
| 05/01/2013 | CN102108552B Method for preparing NiCo2O4 nanocrystal film and application of the film in preparing semiconductor optoelectronic devices |
| 05/01/2013 | CN101842524B Method for growing aluminum nitride crystal, process for producing aluminum nitride crystal, and aluminum nitride crystal |
| 05/01/2013 | CN101835927B Scintillator crystals and methods of forming |
| 05/01/2013 | CN101636850B Iii-nitride light emitting devices grown on templates to reduce strain |
| 05/01/2013 | CN101553604B Process for producing single crystal of silicon carbide |
| 04/25/2013 | WO2013058352A1 Group iii nitride semiconductor crystal |
| 04/25/2013 | WO2013058350A1 Method for producing nitride semiconductor crystal of group 13 metal of periodic table, and nitride semiconductor crystal of group 13 metal of periodic table produced by said production method |
| 04/25/2013 | WO2013057046A1 Mirror with piezoelectric substrate, optical arrangement therewith and associated method |
| 04/25/2013 | WO2013019026A3 Apparatus for fabricating ingot |
| 04/25/2013 | US20130099246 Substrate for epitaxial growth |
| 04/25/2013 | US20130099244 Method of growing semiconductor heterostructures based on gallium nitride |
| 04/25/2013 | DE102008025828B9 Kristallzüchtungsofen mit Schmelzedrainagekanalstruktur Crystal growing furnace melt drainage channel structure |
| 04/24/2013 | EP2584590A1 Process for production of silicon carbide single crystal, and silicon carbide substrate |
| 04/24/2013 | EP2584075A2 Large area deposition and doping of graphene, and products including the same |
| 04/24/2013 | EP2584074A2 Large area deposition and doping of graphene, and products including the same |
| 04/24/2013 | EP2584073A2 Large area deposition and doping of graphene, and products including the same |
| 04/24/2013 | EP2584072A2 Large area deposition of graphene hetero-epitaxial growth, and products including the same |
| 04/24/2013 | EP2584070A1 P-type silicon single crystal and method of manufacturing the same |
| 04/24/2013 | EP2582639A1 Method and device for producing polycrystalline silicon blocks |
| 04/24/2013 | CN202898600U Crucible cover for single crystal furnace |
| 04/24/2013 | CN202898599U Movable screen door device of crystal silicon ingot furnace |
| 04/24/2013 | CN202898598U Ingot furnace |
| 04/24/2013 | CN202898597U Crucible for silicon ingot |
| 04/24/2013 | CN202898593U Improved single-crystal furnace heat shield guide cylinder |
| 04/24/2013 | CN202898592U Guide cylinder for single crystal furnaces |
| 04/24/2013 | CN103069545A Heat treatment method for wafer, method for producing silicon wafer, silicon wafer, and heat treatment apparatus |
| 04/24/2013 | CN103069056A Oxide substrate, and manufacturing method for same |
| 04/24/2013 | CN103066108A Preparation method and application of ferrous acid terbium positive-negative (p-n) heterostructure |
| 04/24/2013 | CN103060923A Structure for regulating volume of quartz crucible by using tungsten or molybdenum cylinder |
| 04/24/2013 | CN103060922A Volume-adjustable combined type crucible |
| 04/24/2013 | CN103060919A Method for preparing calcium sulfate crystal whiskers through sugar mill scales |
| 04/24/2013 | CN103060918A 2-amino-3-nitropyridine bromide nonlinear optical crystal |
| 04/24/2013 | CN103060917A BaGa2SiS6 compound, BaGa2SiS6 nonlinear optical crystal, and preparation method and application thereof |
| 04/24/2013 | CN103060916A Preparation method of yttrium aluminium garnet (YAG) crystal |
| 04/24/2013 | CN103060915A Preparation method of single domain Sm-Ba-Cu-O block capable of inhibiting cracks |
| 04/24/2013 | CN103060914A Method for quickly growing REBCO high-temperature superconducting block by stepped slow cooling acceleration |
| 04/24/2013 | CN103060913A Growth method of large-scale sapphire crystal |
| 04/24/2013 | CN103060912A Constant-temperature energy-saving water cooling system forsapphire crystals |
| 04/24/2013 | CN103060911A Large-size and high-quality factor carbon-doped titanium gem laser crystal and preparation method thereof |
| 04/24/2013 | CN103060910A Method for electrochemically preparing sea-urchin-shaped ZnO nanowire arrays on organic flexible material |
| 04/24/2013 | CN103060909A Method for preparing ZnO nanowire/nanotube arrays with adjustable diameter and height on organic flexible substrate |
| 04/24/2013 | CN103060908A Dual-layer ceramic crucible |
| 04/24/2013 | CN103060907A A method of preparing single-crystal graphene on insulating materials |
| 04/24/2013 | CN103060905A Growing method of superfine indium arsenide nanowire with high crystalline quality |
| 04/24/2013 | CN103060904A Method for realizing growth of AlN monocrystals by growth mode regulation |