| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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| 07/05/2013 | CA2800946A1 Crystal delta form of arginine perindopril salt, its preparation process and the pharmaceutical compounds containing same |
| 07/04/2013 | WO2013101858A1 Thermally stable polycrystalline ultrahard material reinforced with fibrous materials |
| 07/04/2013 | WO2013100456A1 Silicon carbide powder, method for manufacturing the same and method for growing single crystal |
| 07/04/2013 | WO2013100294A1 Apparatus for fabricating ingot and method of fabricating ingot |
| 07/04/2013 | WO2013099249A1 METHOD FOR FABRICATING THREE-DIMENSIONAL GALLIUM NITRIDE STRUCTURES WITH PLANAR SURFACES AND LIGHT EMITTING DIODE (LED) USING THREE-DIMENSIONAL GALLIUM NITRIDE (GaN)PILLAR STRUCTURES WITH PLANAR SURFACES |
| 07/04/2013 | WO2013097953A1 Method for manufacturing single-crystal silicon |
| 07/04/2013 | WO2013097951A1 Method for manufacturing single-crystal silicon |
| 07/04/2013 | DE102012222843A1 Herstellungsverfahren für einen SiC-Volumeneinkristall mit inhomogenem Netzebenenverlauf und einkristallines SiC-Substrat mit inhomogenem Netzebenenverlauf Manufacturing method of a SiC bulk with inhomogeneous lattice course and monocrystalline SiC substrate having an inhomogeneous lattice History |
| 07/04/2013 | DE102012222841A1 Herstellungsverfahren für einen SiC-Volumeneinkristall mit homogenem Netzebenenverlauf und einkristallines SiC-Substrat mit homogenem Netzebenenverlauf Manufacturing method of a SiC bulk with a homogeneous lattice course and monocrystalline SiC substrate with a homogeneous lattice History |
| 07/03/2013 | EP2610373A1 Fluorite |
| 07/03/2013 | EP2610372A2 Method for surface preparation Si(100) substrates |
| 07/03/2013 | EP2609235A1 Eddy current thickness measurement apparatus |
| 07/03/2013 | CN203034149U Ingot casting furnace and glass rod anti-breaking device thereof |
| 07/03/2013 | CN203034148U Assembly for sealing electrode of sapphire crystal furnace |
| 07/03/2013 | CN203034147U Combined type graphite pipe and graphite crucible composed of same |
| 07/03/2013 | CN203034144U Heat preservation structure applied to sapphire single crystal growth through kyropoulos method |
| 07/03/2013 | CN203034142U Solid-liquid interface movement tracking device for polycrystalline ingot furnace |
| 07/03/2013 | CN203034141U Water cooling copper plate cleaning device |
| 07/03/2013 | CN203034140U Tool used for breaking glass rod |
| 07/03/2013 | CN203034139U LED epitaxial wafer reaction cavity |
| 07/03/2013 | CN203034138U Upper heat insulating screen for sapphire growth Kyropoulos furnace |
| 07/03/2013 | CN203034092U Structure for connecting tank body and seal head of tank-like container |
| 07/03/2013 | CN103189994A Microelectronic structures including cuprous oxide semiconductors and having improved P-N heterojunctions |
| 07/03/2013 | CN103189549A Magneto-optical material, faraday rotator, and optical isolator |
| 07/03/2013 | CN103189547A Single crystal pulling device and low heat conductive member to be used in single crystal pulling device |
| 07/03/2013 | CN103189313A Electroactive material |
| 07/03/2013 | CN103184531A Furnace body of monocrystalline furnace |
| 07/03/2013 | CN103184530A Upper furnace body of monocrystalline furnace with magnesium rod interface |
| 07/03/2013 | CN103184528A Single crystal furnace body with characteristic of easy dismounting |
| 07/03/2013 | CN103184526A Upper furnace body of monocrystalline furnace |
| 07/03/2013 | CN103184521A Substituted pyridine complex and application thereof for being served as non-linear optical and ferroelectric material |
| 07/03/2013 | CN103184520A Directly pulling reutilization method of gallium arsenide crystal defective material |
| 07/03/2013 | CN103184519A Method for forming nitride crystals |
| 07/03/2013 | CN103184518A Treatment method for sapphire raw materials |
| 07/03/2013 | CN103184517A Quartz crucible of monocrystalline furnace |
| 07/03/2013 | CN103184516A Polysilicon ingot casting thermal-field structure and method capable of reducing shadows and hard spots |
| 07/03/2013 | CN103184515A Upper furnace body of polycrystalline silicon ingot casting furnace |
| 07/03/2013 | CN103184513A Preparation method of high-temperature superconducting thin film |
| 07/03/2013 | CN103184512A Silicon carbide single crystal growing apparatus with regulatable axial-temperature gradient |
| 07/03/2013 | CN103184511A Method of rewelding during gallium phosphide single crystal drawing process |
| 07/03/2013 | CN103184506A Rod taking device of monocrystalline silicon crystal rod |
| 07/03/2013 | CN103184503A Upper furnace lid of monocrystalline furnace with observation window |
| 07/03/2013 | CN103184502A Crystal growth furnace side shield used for sapphire crystal ingot manufacturing |
| 07/03/2013 | CN103184501A Gallium arsenide polycrystalline ingot casting method |
| 07/03/2013 | CN103184425A Method for growing graphene film by using low-temperature chemical vapor deposition |
| 07/03/2013 | CN103183518A Method for preparing carbon/carbon composite material draft tube |
| 07/03/2013 | CN102330058B Method for preparing multi-grade antimonytelluride nano wire harness array by adopting physical vapor deposition |
| 07/03/2013 | CN102084039B Process for production of AlxGa(1-x)N single crystal, AlxGa(1-x)N single crystal, and optics |
| 07/03/2013 | CN101616868B Apparatus and method for manufacturing silicon substrate, and silicon substrate |
| 07/02/2013 | CA2594132C Preparation of suspensions |
| 07/02/2013 | CA2408302C Long wavelength engineered fluorescent proteins |
| 06/27/2013 | WO2013094318A1 Method for evaluating silica glass crucible, method for producing silicon single crystals |
| 06/27/2013 | WO2013094245A1 Polycrystalline silicon ingot, process for producing same, and uses thereof |
| 06/27/2013 | WO2013094058A1 Aluminum nitride single crystal substrate and method for producing same |
| 06/27/2013 | WO2013093747A1 A method for the forced doping of a doped silicon ingot and system for exploiting the method |
| 06/27/2013 | WO2013093580A1 Processes and systems for reducing undesired deposits within a reaction chamber associated with a semiconductor deposition system |
| 06/27/2013 | WO2013057732A3 Ordered stacked sheets of layered inorganic compounds, nanostructures comprising them, processes for their preparation and uses thereof |
| 06/27/2013 | WO2013025024A4 Ingot growing apparatus and method of manufacturing ingot |
| 06/27/2013 | WO2012163531A8 Device for refining of silicon by directional solidification in an oxygen-containing atmosphere as well as a refining method of silicon |
| 06/26/2013 | EP2608248A1 Heat treatment method for wafer, method for producing silicon wafer, silicon wafer, and heat treatment apparatus |
| 06/26/2013 | EP2607527A1 Process for production of aluminum-containing iii nitride single crystal |
| 06/26/2013 | EP2607526A1 Silicon single crystal substrate and method of manufacturing the same |
| 06/26/2013 | EP2607317A1 Oxide superconducting thin film |
| 06/26/2013 | EP2607308A1 Silicon feedstock for solar cells |
| 06/26/2013 | CN203021679U Heating electrode for producing sapphire crystals through KY (Kyropulos) method |
| 06/26/2013 | CN203021678U Annular ferrule-type device capable of increasing feeding amount of quartz crucible |
| 06/26/2013 | CN203021677U Sapphire furnace seed rod lifting mechanism |
| 06/26/2013 | CN203021676U Flow guide tube for increasing growth rate of monocrystalline silicon |
| 06/26/2013 | CN103180495A Method of forming a composite substrate |
| 06/26/2013 | CN103180494A Method of manufacturing gan-based film and composite substrate used therefor |
| 06/26/2013 | CN103180493A Process for growing silicon carbide single crystal and device for the same |
| 06/26/2013 | CN103180492A Langasite-type oxide material, production method for same, and raw material used in production method |
| 06/26/2013 | CN103180241A A diamond optical element |
| 06/26/2013 | CN103173867A Method for eliminating resistance distortion caused by heat donor at head part of solar single crystal |
| 06/26/2013 | CN103173866A Preparation method of brush-structured lead titanate/zinc oxide composite nano-fiber |
| 06/26/2013 | CN103173865A Low-cost nickel-base single crystal high-temperature alloy and preparation method thereof |
| 06/26/2013 | CN103173864A Method for manufacturing group iii nitride single crystals |
| 06/26/2013 | CN103173863A Large-size silicon carbide (SiC) monocrystal growth device |
| 06/26/2013 | CN103173862A Chromium-doped calcium magnesium silicate tunable laser crystal and preparation method thereof |
| 06/26/2013 | CN103173861A Doping type tantalic acid gallium-lanthanum crystal for high-temperature piezoelectric devices and preparation method thereof |
| 06/26/2013 | CN103173860A K3YB6O12 compound, K3YB6O12 nonlinear optical crystal and preparation methods and applications thereof |
| 06/26/2013 | CN103173859A Cadmium sodium borophosphate compound, cadmium sodium borophosphate nonlinear optical crystal, preparation methods of compound and crystal, and use of crystal |
| 06/26/2013 | CN103173858A Device capable of reducing adhesion of volatile matters on window of reflecting screen of sapphire single crystal furnace |
| 06/26/2013 | CN103173857A Silicon single crystal substrate and method of manufacturing the same |
| 06/26/2013 | CN103173856A Device for detecting silicon leakage of ingot furnace |
| 06/26/2013 | CN103173855A Method for growing HEM crystal under protection of inert gas |
| 06/26/2013 | CN103173853A Thermal field centralized positioning device of single crystal furnace for growing large sapphires through kyropoulos method |
| 06/26/2013 | CN103173852A Thermal field of monocrystalline silicon manufacturing device |
| 06/26/2013 | CN103173850A Monocrystalline silicon producing process |
| 06/26/2013 | CN103173849A Furnace chamber structure of monocrystalline silicon manufacturing device |
| 06/26/2013 | CN103173847A Simple method for disposing hot seed crystals in preparation of single-domain superconductive bulks through melt texture technology |
| 06/26/2013 | CN103173846A Growing method of rutile crystals |
| 06/26/2013 | CN103173845A Production method and application of terephthalic metal slat whisker |
| 06/26/2013 | CN103173844A Hydro-thermal synthesis method of TiO2 with excellent crystallinity and conductivity |
| 06/26/2013 | CN103173829A Method for preparing cadmium telluride semiconductor thin film by electrochemical deposition |
| 06/26/2013 | CN103173780A Method and device for preparing solar polycrystalline silicon material by semi-continuous molten salt electrolysis |
| 06/26/2013 | CN103173753A Electrochemical method for improving photoelectric performance of nano bismuth vanadate film |
| 06/26/2013 | CN103173738A Preparation method for GaN nanostructure with adjustable Ga vacancy |
| 06/26/2013 | CN103173715A Preparation method of GaP film material |
| 06/26/2013 | CN103173646A Iron-palladium alloy nanometer wire and preparation method thereof |