Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107)
10/2013
10/30/2013EP2657373A1 Crucible for growing crystals
10/30/2013EP2657372A1 Non-monolithic crucible
10/30/2013EP2656374A1 Controlling doping of synthetic diamond material
10/30/2013EP2656373A1 A microwave plasma reactor for manufacturing synthetic diamond material
10/30/2013EP2655704A1 Dislocation engineering in single crystal synthetic diamond material
10/30/2013CN203256370U Inclined type coagulantion-enhancing water cooling crucible
10/30/2013CN203256369U Ingot pulling mechanism of directional solidification device
10/30/2013CN203256367U Apparatus for centering adjustment of seed crystal and crucible in crystal growth furnace
10/30/2013CN103374756A Second-order nonlinear optical material of reduced Schiff base zinc complex
10/30/2013CN103374755A Non-integrated crucible
10/30/2013CN103374754A Sapphire material and preparation method thereof
10/30/2013CN103374753A Large-size sapphire crystal growing furnace
10/30/2013CN103374752A Method for preparing monocrystal manganese tetroxide (Mn3O4)
10/30/2013CN103374750A Seed crystal fixing method for SiC crystal grown by PVT (Physical Vapor Transportation) process
10/30/2013CN103374748A Crucible for monocrystalline silicon growth, manufacturing method thereof, and manufacturing method for monocrystalline silicon
10/30/2013CN103374747A Method for preparing zone-melting silicon materials by using zone continuous casting process
10/30/2013CN103374746A Device for producing quasi-single crystal silicon and production method of quasi-single crystal silicon
10/30/2013CN102689904B Method for preparing SiC nanowire and array thereof
10/30/2013CN102628113B Ultrahigh pressure new phase Cu2Sb alloy crystal and preparation method thereof
10/30/2013CN102517551B Preparation method for three-dimensional photonic crystal
10/30/2013CN102492938B Single-contact rotation-revolution base boat
10/30/2013CN102337592B SiC晶体生长炉测温窗 SiC crystal growth furnace temperature window
10/30/2013CN102286781B Crucible moving device for sapphire crystal growth
10/30/2013CN101981677B Epitaxial substrate for smeiconductor element, semiconductor element, and process for producing epitaxial substrate for semiconductor element
10/30/2013CN101796225B Seed crystal for pulling silicon single crystal and method for manufacturing silicon single crystal by using seed crystal
10/30/2013CN101671843B Semiconductor wafer composed of monocrystalline silicon and method for producing same
10/29/2013US8568537 Epitaxial wafer and method of producing the same
10/24/2013WO2013157418A1 SiC SINGLE CRYSTAL AND PRODUCTION METHOD THEREOF
10/24/2013WO2013157057A1 Vapor deposition apparatus and method associated
10/24/2013WO2013156537A1 Synthetic diamond crystals
10/24/2013WO2013155540A1 Crucible for producing oxide ceramic monocrystals
10/24/2013US20130280466 Large Diameter, High Quality SiC Single Crystals, Method and Apparatus
10/23/2013EP2653591A1 Process for growing silicon carbide single crystal by physical vapor transport method and annealing silicon carbide single crystal in situ
10/23/2013CN203247338U Seed crystal slotting tool
10/23/2013CN203247337U Heating body structure of single crystal growth furnace
10/23/2013CN203245344U Continuously-connecting device of single crystal thin wire rod
10/23/2013CN103370765A Controlling doping of synthetic diamond material
10/23/2013CN103370455A Nanowire preparation methods, compositions, and articles
10/23/2013CN103370454A Epitaxial silicon carbide single-crystal substrate and process for producing same
10/23/2013CN103370453A III-V semiconductor structures with diminished pit defects and methods for forming the same
10/23/2013CN103370452A Preparation of doped garnet structure single crystals with diameters of up to 500 mm
10/23/2013CN103361737A Double annealing process for reducing back diffusion of impurity in polysilicon ingot
10/23/2013CN103361735A IIIA-VA group semiconductor monocrystal substrate and preparation method thereof
10/23/2013CN103361734A Method for improving output efficiency of polycrystalline silicon
10/23/2013CN103361730A Annular photonic crystal, and preparation method and application thereof
10/23/2013CN103361729A Method for preparing P-type aluminum nitride crystal
10/23/2013CN103361728A Sr2CuO(3+delta) high-temperature superconductor single crystal and method for preparing single crystal
10/23/2013CN103361727A Sapphire single crystal and making method thereof
10/23/2013CN103361726A Compound sodium-lithium phosphate, sodium-lithium phosphate nonlinear optical crystal, preparation method and application
10/23/2013CN103361725A Compound lead-barium fluroborate, lead-barium fluroborate nonlinear optical crystal, preparation method and application
10/23/2013CN103361724A Boron-gallium co-doped efficient polycrystalline silicon and preparation method thereof
10/23/2013CN103361723A Polysilicon ingot furnace with graphite solidifying assistant blocks
10/23/2013CN103361722A Polycrystalline silicon ingots and preparation method thereof, polycrystalline silicon chips and polycrystalline silicon ingot casting crucible
10/23/2013CN103361721A Melting height control method of ingot casting crystal seed and polycrystalline silicon ingot casting furnace
10/23/2013CN103361720A Crucible used for manufacturing polysilicon ingot
10/23/2013CN103361719A Method for growing gallium nitride epitaxial layer on buffer layer
10/23/2013CN103361718A Method for growing aluminium nitride monocrystal by using physical vapor transport method
10/23/2013CN103361717A Production technology for growing YAG (yttrium aluminum garnet) single crystal by using mould-guide method
10/23/2013CN103361714A Cooling block for polycrystalline silicon ingot furnace
10/23/2013CN103361713A 晶体 Crystals
10/23/2013CN103361712A Crystal carrying bracket for large-section KDP (Potassium Dihydrogen Phosphate) crystal growth and growing method of large-section KDP crystal
10/23/2013CN103361711A Preparation method of low-cost single domain GdBCO superconducting bulk
10/23/2013CN103361710A Method for improving preparation efficiency of single domain Y-Ba-Cu-O superconducting bulk
10/23/2013CN103359756A YBBO compound, YBBO non-linear optical crystal as well as preparation method and application of YBBO non-linear optical crystal
10/23/2013CN103359755A Compound pentabarium monofluortriborate and nonlinear optical crystals of pentabarium monofluortriborate, and preparation method and use thereof
10/23/2013CN103357890A One-pot cellulose hydrothermal synthesis method for preparing high-draw-ratio silver nanowire
10/23/2013CN102392302B Method for preparing LiFePO4 by microwave water according to heat method
10/23/2013CN102358954B Method for growing CaxBa1-xNb2O6 series crystals
10/23/2013CN102242397B Process for producing Czochralski silicon single crystal
10/23/2013CN101748477B Intelligent PID control method for controlling growth process of monocrystalline silicon and system thereof
10/23/2013CN101684549B Method for manufacturing nitride semiconductor device
10/19/2013CA2810165A1 Granular polycrystalline silicon and production thereof
10/17/2013WO2013155170A1 Biotemplated perovskite nanomaterials
10/17/2013WO2013153749A1 Apatite crystal
10/17/2013WO2013152434A2 Multi-doped lutetium based oxyorthosilicate scintillators having improved photonic properties
10/17/2013US20130269597 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon carbide
10/17/2013US20130269596 Feed material for epitaxial growth of monocrystalline silicon carbide, and method for epitaxial growth of monocrystalline silicon carbide
10/17/2013CA2809452A1 Packing of polycrystalline silicon
10/16/2013EP2650407A1 Perovskite manganese oxide thin film
10/16/2013EP2650405A2 Methods for preparing a melt of silicon powder for silicon crystal growth
10/16/2013CN103354946A A microwave plasma reactor for manufacturing synthetic diamond material
10/16/2013CN103354845A Dislocation engineering in single crystal synthetic diamond material
10/16/2013CN103354204A Systems and methods for preparation of epitaxially textured thick films
10/16/2013CN103352255A Preparation method of photonic crystal with inverse opal structure
10/16/2013CN103352254A Method for preparing octahedral platinoid alloy nanocrystals and octahedral platinoid alloy nanocrystal prepared through adopting same
10/16/2013CN103352253A Method for regulating doping concentration of n-type SiC mono-crystalline low-dimensional nano-material
10/16/2013CN103352252A Molybdenum potassium nitrate compound, nonlinear optical crystal, preparation method and application thereof
10/16/2013CN103352251A Solvothermal method for preparing Sm2O3 nanoarray
10/16/2013CN103352250A Hydrothermal method for preparing Sm2O3 nanoarray
10/16/2013CN103352249A Method for enlarging chemical vapor deposition graphene single crystal domain size
10/16/2013CN103352248A Crystallization process of polycrystalline silicon and ingot casting process of polycrystalline silicon
10/16/2013CN103352247A Axial temperature gradient-adjustable insulation structure applied to growth of sapphire single crystals by Kyropoulos method
10/16/2013CN103351379A Second-order nonlinear laser material N, N'-propionyl-(2-thenoyl) hydrazine crystal and growing method and application thereof
10/16/2013CN103350234A Preparation method of platinum copper concave alloy nanometer crystal, and platinum copper concave alloy nanometer crystal prepared through preparation method of platinum copper concave alloy nanometer crystal
10/16/2013CN101914811B One hundred millimeter high purity semi-insulating single crystal silicon carbide wafer
10/15/2013US8557041 Method for manufacturing P-I-N microcrystalline silicon structure for thin-film solar cells
10/15/2013CA2746117C Polycrystalline silicon and method for production thereof
10/10/2013WO2013151116A1 Crucible-protective sheet and method for protecting carbonaceous crucible using said crucible-protective sheet
10/10/2013WO2013151045A1 Crystal growth method and crystal growth apparatus
10/10/2013WO2013150822A1 Silicon carbide substrate, semiconductor device and methods for producing same
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