| Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
|---|
| 10/10/2013 | WO2013150812A1 Apparatus for producing ferroelectric film and method for producing ferroelectric film |
| 10/10/2013 | WO2013150758A1 Method for evaluating degree of crystal orientation in polycrystalline silicon, selection method for polycrystalline silicon rods, and production method for single-crystal silicon |
| 10/10/2013 | WO2013149607A1 Reproducible step-edge josephson junction |
| 10/10/2013 | WO2013149560A1 Polycrystalline silicon ingot, preparation method thereof, and polycrystalline silicon wafer |
| 10/10/2013 | WO2013149559A1 Polycrystalline silicon ingot, preparation method therefor and polycrystalline silicon chip |
| 10/10/2013 | WO2013112884A3 Method for purification of silicon |
| 10/10/2013 | US20130266800 Colloidal infrared reflective and transparent conductive aluminum-doped zinc oxide nanocrystals |
| 10/10/2013 | US20130263774 Seed material for liquid phase epitaxial growth of monocrystalline silicon carbide, and method for liquid phase epitaxial growth of monocrystalline silicon |
| 10/10/2013 | DE102013205068A1 Passivieren von Punktdefekten in Gatedielektrikumsschichten mit großer Dielektrizitätskonstante während der Gatestapelbildung Passivation of point defects in the gate dielectric with a high dielectric constant while the gate stack formation |
| 10/10/2013 | DE102012215677B3 Verfahren zum Herstellen eines Einkristalls aus Silizium A method of manufacturing a single crystal of silicon |
| 10/09/2013 | EP2647743A1 Bismuth-substituted rare earth iron garnet crystal film and optical isolator |
| 10/09/2013 | EP2647742A1 Bismuth-substituted rare earth iron garnet crystal film and optical isolator |
| 10/09/2013 | EP2647741A2 Apparatus for manufacturing silicon substrate |
| 10/09/2013 | EP2646604A1 Heat exchanger for a system for solidifying and/or crystallizing a semiconductor |
| 10/09/2013 | CN103348453A Compound semiconductor single crystal substrate and method for manufacturing same |
| 10/09/2013 | CN103348044A Base, substrate with gallium nitride crystal layer, and process for producing same |
| 10/09/2013 | CN103348043A Method for producing substrate for group iii nitride semiconductor element fabrication, method for producing group iii nitride semiconductor free-standing substrate or group iii nitride semiconductor element, and group iii nitride growth substrate |
| 10/09/2013 | CN103343390A P-type heat treatment process method of tellurium-cadmium-mercury vapor-phase epitaxial material |
| 10/09/2013 | CN103343389A Preparation method for CdZnTe film with cylindrical structure |
| 10/09/2013 | CN103343388A Preparation method for polycrystalline silicon cast ingot |
| 10/09/2013 | CN103343387A Polycrystalline silicon ingotting furnace and ingotting method thereof |
| 10/09/2013 | CN103343384A Device for separating hypereutectic aluminum-silicon alloy and application of device |
| 10/03/2013 | WO2013147326A1 Method for manufacturing group 13 element nitride crystal and solvent composition |
| 10/03/2013 | WO2013147203A1 Periodic table group 13 metal nitride crystals and method for manufacturing periodic table group 13 metal nitride crystals |
| 10/03/2013 | WO2013147097A1 Method for producing nitride single crystal |
| 10/03/2013 | WO2013145404A1 Laminated substate of silicon single crystal and group iii nitride single crystal with off angle |
| 10/03/2013 | WO2013144640A1 Process for producing two-dimensional nanomaterials |
| 10/03/2013 | WO2013143972A1 Method for producing a directionally solidified material body, and uses thereof |
| 10/03/2013 | WO2013143324A1 Luminous crystal containing bismuth and with ultra wide band of 1-3 micrometers and preparation method thereof |
| 10/02/2013 | EP2644756A1 Patterned sapphire substrate and method for manufacturing the same and nitride semiconductor light emitting element using that sapphire substrate |
| 10/02/2013 | EP2644755A1 Single crystal pulling device and low heat conductive member to be used in single crystal pulling device |
| 10/02/2013 | EP2643847A2 Method for reducing the range in resistivities of semiconductor crystalline sheets grown in a multi-lane furnace |
| 10/02/2013 | EP2643500A1 Germanium enriched silicon for solar cells |
| 10/02/2013 | DE112011103768T5 Siliziumcarbidpulver zur Herstellung eines Siliziumcarbid-Einkristalls und Verfahren zu seiner Herstellung Silicon carbide for producing a silicon carbide single crystal and method for its preparation |
| 10/02/2013 | CN203222630U Weighing structure for sapphire furnace |
| 10/02/2013 | CN103339300A Crucible body and method of forming same |
| 10/02/2013 | CN103339299A Article and method for forming large grain polycrystalline silicon films |
| 10/02/2013 | CN103334155A Crystalline silicon material containing titanium impurity intermediate band, and preparation method thereof |
| 10/02/2013 | CN103334154A Preparation method of polycrystalline silicon ingots based on thermal exchange technology |
| 10/02/2013 | CN103334153A Single crystal furnace |
| 10/02/2013 | CN103334141A Preparation method of double-rare-earth-doped TiO2 nanotube ordered array |
| 10/02/2013 | CN103334090A Preparation method of InN (indium nitride)/AlN (aluminum nitride)/glass structure |
| 10/02/2013 | CN103334033A Components of single crystal nickel-base superalloy and preparation method thereof |
| 10/02/2013 | CN103333680A Dinyl oxazole eutectic material with multi-color fluorescence characteristic and preparation method of dinyl oxazole eutectic material |
| 10/02/2013 | CN103332659A Blue fluorescence single crystal zinc telluride nanorod as well as preparation method and application thereof |
| 10/02/2013 | CN102330143B Manufacturing process of monocrystalline silicon ingot and thermal field structure of ingot furnace |
| 10/01/2013 | US8546830 Method of growing semiconductor heterostructures based on gallium nitride |
| 10/01/2013 | CA2727105C Improved low sulfur nickel-base single crystal superalloy with ppm additions of lanthanum and yttrium |
| 09/26/2013 | WO2013141473A1 Multi-crucible silicon ingot growing apparatus |
| 09/26/2013 | WO2013141472A1 Silicon ingot growing apparatus provided with probing rod |
| 09/26/2013 | WO2013141471A1 Silicon ingot growing apparatus provided with feed unit |
| 09/26/2013 | WO2013141272A1 Alignment substrate for forming epitaxial film, and process for producing same |
| 09/26/2013 | WO2013141099A1 Self-supporting gallium nitride crystal substrate and method for manufacturing same |
| 09/26/2013 | WO2013140706A1 A silica container for pulling up monocrystalline silicon and method for manufacturing same |
| 09/26/2013 | WO2013139887A1 Method for producing iii-n single crystals, and iii-n single crystal |
| 09/26/2013 | US20130251950 Silicon wafer |
| 09/26/2013 | US20130251614 Annealing of single crystals |
| 09/26/2013 | US20130248764 Method for increasing the content of ce3+ in laser materials |
| 09/26/2013 | DE112012000306T5 Verfahren zum Herstellen eines Silizium-Einkristallwafers und eines thermisch behandelten Wafers A method for manufacturing a silicon single crystal wafer and a wafer thermally treated |
| 09/26/2013 | DE112012000265T5 Einkristallherstellungsvorrichtung und Verfahren zum Herstellen eines Einkristalls Einkristallherstellungsvorrichtung and method for producing a single crystal |
| 09/26/2013 | DE102012204553A1 Preparing template, comprises growing crystalline III-N-material on substrate, and depositing intermediate layer on substrate as mask material or in crystalline III-N material, where intermediate layer includes III-N-nucleation layer |
| 09/26/2013 | DE102012204551A1 Preparing template comprising substrate and crystal layer made of e.g. aluminum nitride, comprises e.g. performing crystal growth of material on substrate at crystal growth temperature, changing to second temperature and continuing growth |
| 09/25/2013 | EP2642001A1 Method for producing epitaxial silicon carbide single crystal substrate |
| 09/25/2013 | EP2642000A2 Group 13 nitride crystal and group 13 nitride crystal substrate |
| 09/25/2013 | EP2641996A1 Method for growing magnesium-zinc-oxide-based crystal |
| 09/25/2013 | EP2640875A2 Sapphire ingot grower |
| 09/25/2013 | EP2640874A1 Apparatus and method for directional solidification of silicon |
| 09/25/2013 | CN203212672U Zirconia microsphere ceramic heat-insulating cylinder of large-diameter sapphire crystal growth furnace |
| 09/25/2013 | CN203212670U Alumina microsphere ceramic heat-insulating cylinder of large-diameter sapphire crystal growth furnace |
| 09/25/2013 | CN203212669U Silicon material adding device and tray thereof |
| 09/25/2013 | CN203209030U Graphite heating and thermal insulation combined element for artificial diamond single crystal growth |
| 09/25/2013 | CN203209028U Lamproite-based container for crystal growth of artificial diamonds |
| 09/25/2013 | CN103328696A Silicon single-crystal wafer production method, and annealed wafer |
| 09/25/2013 | CN103328695A Resistance heated sapphire single crystal ingot grower, method of manufacturing resistance heated sapphire sngle crystal ingot, sapphire sngle crystal ingot, and sapphire wafer |
| 09/25/2013 | CN103325896A Gallium nitride-based LED (Light Emitting Diode) epitaxial growth method improving light emitting efficiency |
| 09/25/2013 | CN103320867A Method for electric field assisted preparation of one-dimensional nanometer ZnO crystal whisker |
| 09/25/2013 | CN103320866A Molecular beam epitaxial (MBE) growth method of Bi element regulated and controlled GaAs-based nanowire crystal structure |
| 09/25/2013 | CN103320865A Shower head and vapor deposition equipment |
| 09/25/2013 | CN103320864A Group 13 nitride crystal and group 13 nitride crystal substrate |
| 09/25/2013 | CN103320863A Synthetic method of large-sized octahedral cubic boron nitride monocrystals |
| 09/25/2013 | CN103320862A Colored moissanite gemstone and preparation method thereof |
| 09/25/2013 | CN103320861A Indium, ytterbium and thulium triple-doped lithium niobate crystal and preparation method thereof |
| 09/25/2013 | CN103320860A Ho-doped ScVO4 luminous material and crystal growth method for same using melt method |
| 09/25/2013 | CN103320859A Orthorhombic phase Gd(OH)CO3, preparation method and application thereof |
| 09/25/2013 | CN103320858A Sapphire wafer |
| 09/25/2013 | CN103320857A Growth method and device for sapphire crystals |
| 09/25/2013 | CN103320856A Preparation method of fluoride-free single-crystal TiO2 nanometer thin film |
| 09/25/2013 | CN103320855A Polysilicon thin layer deposition method |
| 09/25/2013 | CN103320854A Coating structure for crucible, preparation method thereof, and crucible with coating structure |
| 09/25/2013 | CN103320853A Seed crystal laying method, method for casting mono-like silicon ingot and Mono-like Silicon wafer |
| 09/25/2013 | CN103320852A Reaction cavity used for epitaxial deposition |
| 09/25/2013 | CN103320851A Large-size 15R silicon carbide crystal preparation method |
| 09/25/2013 | CN103320848A Polycrystalline ingot furnace |
| 09/25/2013 | CN103320847A Potassium niobate monocrystalline nano-wire and preparation method thereof |
| 09/25/2013 | CN103320771A Shower head and vapor deposition equipment |
| 09/25/2013 | CN103320764A Method for preparing InN semiconductor device based on a-side GaN buffer layer on a-side 6H-SiC substrate |
| 09/25/2013 | CN103320210A Waste mortar separating and recycling technology for cutting silicon slice |
| 09/25/2013 | CN103320132A Tm- and Ho- doped ScVO4 luminous material and crystal growth method for same using melt method |
| 09/25/2013 | CN103316612A Continuous growing method for synthesizing large single crystals of cubic boron nitride by using seed crystals |
| 09/25/2013 | CN102674319B Preparation method for Ni film assisted annealing graphene nano belt based on C injection |