Patents for C30B 29 - Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape (27,107) |
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09/25/2013 | CN102674318B C injection-based Cu film assisted annealing graphene nanoribbon preparation method |
09/25/2013 | CN102583331B Preparation method for large-area graphene based on Ni film auxiliary annealing and Cl2 reaction |
09/25/2013 | CN102337591B Ytterbium-doped potassium triyttrium borate laser crystal, and growing method and application thereof |
09/25/2013 | CN102296361B Preparation method of single crystal graphene |
09/25/2013 | CN102242391B Heater improvement apparatus in ingot furnace producing quasi-single crystal silicon with casting method |
09/25/2013 | CN102242390B Heating method for producing similar single crystal silicon ingot materials by using casting method |
09/25/2013 | CN102208497B Preparation method of semi-polarity or nonpolar GaN composite substrate on silicon substrate |
09/25/2013 | CN102041551B Base material for growing single crystal diamond and method for producing single crystal diamond substrate |
09/25/2013 | CN101657569B Method and device for the production of a compound semiconductor material by means of gas phase epitaxy |
09/25/2013 | CN101586253B N-type group iii nitride-based compound semiconductor and production method therefor |
09/25/2013 | CN101240447B 硅晶片及其制造方法 A silicon wafer and manufacturing method thereof |
09/24/2013 | US8541292 Group III nitride semiconductor epitaxial substrate and method for manufacturing the same |
09/24/2013 | CA2810169A1 Titanium aluminide intermetallic compositions |
09/19/2013 | WO2013138760A1 Medical instrument made of mono-crystalline shape memory alloys and manufacturing methods |
09/19/2013 | WO2013136984A1 Polycrystalline silicon rod |
09/19/2013 | WO2013136948A1 Method for producing zinc oxide single crystal |
09/19/2013 | WO2013136666A1 Method for producing silicon single crystal wafer |
09/19/2013 | WO2013135886A1 Acoustic wave device comprising a lithium niobate and/or lithium tantalate material with an optimised, low-tcf composition, and method for manufacturing said material |
09/19/2013 | WO2013135785A1 Process for manufacturing synthetic single crystal diamond material |
09/19/2013 | WO2013135002A1 Method for preparing composite substrate for gan growth |
09/19/2013 | WO2013135001A1 Composite substrate used for gan growth |
09/19/2013 | US20130239615 Method for growing white color diamonds by using diborane and nitrogen in combination in a microwave plasma chemical vapor deposition system |
09/19/2013 | DE102006055376B4 Verfahren zur Herstellung eines Silizium-Halbleiterkristalls A method for producing a silicon semiconductor crystal |
09/18/2013 | EP2639345A1 Apparatus and method for production of aluminum nitride single crystal |
09/18/2013 | EP2639344A1 METHOD FOR PRODUCING n-TYPE SiC MONOCRYSTAL |
09/18/2013 | EP2639343A1 A method of manufacturing thin layers of eutectic composites |
09/18/2013 | EP2639342A1 Method of manufacturing silicon single crystal |
09/18/2013 | CN203200383U Thermal cutter for sapphire crystal growth furnace |
09/18/2013 | CN203200381U Novel crystal growth furnace heater |
09/18/2013 | CN203200380U Fixing support for backing ring of crucible cover of crystal growth furnace |
09/18/2013 | CN203200379U Two-channel type temperature measuring equipment for sapphire crystal growth furnace |
09/18/2013 | CN203200378U Argon circulation impurity discharge device of polycrystalline silicon ingot furnace |
09/18/2013 | CN203200377U Ladder-shaped heat shield for sapphire crystal growing furnace |
09/18/2013 | CN203200376U Deformed backing ring for sapphire crystal growth crucible |
09/18/2013 | CN203200375U Sapphire C-axis growth thermal field device |
09/18/2013 | CN203200374U Heat field structure of polycrystalline silicon ingot furnace |
09/18/2013 | CN203200373U Kyropoulos-method sapphire video seeding system |
09/18/2013 | CN203200372U Seed crystal cooling apparatus for growing sapphire through kyropoulos method |
09/18/2013 | CN203200179U Silicon steam corrosion resisting inner coating for directly protecting carbon fiber |
09/18/2013 | CN103314139A Method for producing gemstones from silicon carbide |
09/18/2013 | CN103313937A Porous electroactive material |
09/18/2013 | CN103305927A Observation device for inner liquid level of polycrystalline ingot furnace |
09/18/2013 | CN103305925A Method for treating surface defects of thallium-doped cesium iodide thin film |
09/18/2013 | CN103305924A Method for reducing dislocation of crystal inside silicon ingot in ingot casting process |
09/18/2013 | CN103305923A Heat-treatment reaction tube member |
09/18/2013 | CN103305921A Ti3Al1 xSixC2/TiO2 nanowire or whisker integrated material and preparation method thereof |
09/18/2013 | CN103305920A Preparation method of Ag-TCNQ one-dimensional nanocrystal and application thereof |
09/18/2013 | CN103305919A Growth method of organic nonlinear optical crystal |
09/18/2013 | CN103305918A N-type heat treatment process method for tellurium-cadmium-mercury gas-phase epitaxial material |
09/18/2013 | CN103305917A Method for manufacturing GaN template substrate and GaN template substrate |
09/18/2013 | CN103305916A Ho-doped LaVO4 luminescent material and melting crystal growth method thereof |
09/18/2013 | CN103305915A Tm-doped LaVO4 luminescent material and melting crystal growth method thereof |
09/18/2013 | CN103305914A Tm and Ho-doped LaVO4 luminous material and melt crystal growth method thereof |
09/18/2013 | CN103305913A Tm-doped ScVO4 luminescent material and melting crystal growth method thereof |
09/18/2013 | CN103305912A Cr, Tm, Ho-doped LaVO4 luminescent material and melting crystal growth method thereof |
09/18/2013 | CN103305911A Horizontal directional solidification preparation method of large-size Re:YAP series laser crystal |
09/18/2013 | CN103305910A Crucible for silicon ingot casting and preparation method of inner side coating thereof |
09/18/2013 | CN103305909A Preparation method of composite substrate for GaN growth |
09/18/2013 | CN103305908A Composite substrate for GaN growth |
09/18/2013 | CN103305907A Reaction chamber for epitaxial deposition |
09/18/2013 | CN103305906A Reaction chamber of epitaxial deposition nitriding III-group or nitriding II--group material |
09/18/2013 | CN103305905A Variable crucible ratio monocrystal silicon growth method |
09/18/2013 | CN103305903A Method for preparing GaN crystal by high-nitrogen pressure flux-crucible descending process |
09/18/2013 | CN103305902A Method for producing silicon ingots |
09/18/2013 | CN103305900A Method for preparing nano-micron pyrite cubic crystals under hydrothermal condition |
09/18/2013 | CN103305899A Method for growing large-size kalium titanyl arsenate single crystals through hydrothermal process |
09/18/2013 | CN103305220A Cr, Tm, Ho-doped ScVO4 luminescent material and melting crystal growth method thereof |
09/18/2013 | CN103302304A Preparation method of nickel or nickel alloy nanotube |
09/18/2013 | CN102304763B Continuous high temperature chemical vapor deposition (HTCVD) method silicon carbide crystal growing device |
09/18/2013 | CN102289235B Heating control system and method based on top separated control polycrystalline silicon ingot casting furnace |
09/18/2013 | CN102212885B Texturing method for polycrystalline silicon solar cells |
09/18/2013 | CN101713098B Silicon wafer and fabrication method thereof |
09/12/2013 | WO2013133939A1 Copper nanowire preparation methods and compositions |
09/12/2013 | WO2013132236A1 Mesoporous single crystal semiconductors |
09/12/2013 | US20130237402 Sapphire material and production method thereof |
09/12/2013 | DE112011104351T5 System zur Steuerung eines Durchmessers eines Einkristallingots und Einkristallingot-Zuchtvorrichtung umfassend dasselbe System for controlling a diameter of a single crystal ingots and single-crystal ingot-growing apparatus comprising the same |
09/11/2013 | EP2636773A1 Metal fluoride crystal, and light-emitting element |
09/11/2013 | EP2636772A1 Colquiriite-type crystal, scintillator for neutron detection, and neutron radiation detector |
09/11/2013 | EP2636647A1 Metal fluoride eutectic body and neutron scintillator |
09/11/2013 | EP2636646A1 Metal fluoride eutectic, scintillator for neutrons, and neutron imaging device |
09/11/2013 | EP2635926A1 Method of imaging in crystalline colloidal arrays |
09/11/2013 | EP2635726A1 Method of forming a composite substrate. |
09/11/2013 | CN203187792U Sapphire furnace vertical lifting automatic detection device |
09/11/2013 | CN203187791U Small furnace cover of sapphire furnace |
09/11/2013 | CN203187790U Large furnace cover of sapphire furnace |
09/11/2013 | CN203187789U Furnace body of sapphire furnace |
09/11/2013 | CN203187788U External water circulating system for gemstone furnace |
09/11/2013 | CN203187787U Connecting device of heating body of gemstone furnace |
09/11/2013 | CN203187786U Crucible heat device for crystal oven |
09/11/2013 | CN203187785U Vacuum anti-sundry device of furnace body of sapphire furnace |
09/11/2013 | CN203187784U Sealing device of seeding shaft of gemstone furnace |
09/11/2013 | CN203187783U Temperature measuring device at bottom of gemstone furnace |
09/11/2013 | CN203187782U Device for preparing single crystal graphene |
09/11/2013 | CN203187781U Crucible unit for crystal growth |
09/11/2013 | CN203187780U 多晶硅铸锭炉 Polycrystalline silicon ingot furnace |
09/11/2013 | CN203187779U Forklift and material forklift arm thereof |
09/11/2013 | CN203187778U Air inlet plug-in component for low-pressure peripheral equipment |
09/11/2013 | CN203187776U Lifting control device for sapphire production |
09/11/2013 | CN203187774U Special lifting tool for crucible of gemstone furnace |
09/11/2013 | CN203187772U Crucible unit for crystal growth |